N-Channel MOSFET Transistor

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采用 D-Pak 封装的 150V 单 N 通道 IR MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 40 A RDS(ON)

High Efficiency Synchronous Rectification in SMPS

文件：304.9 Kbytes Page：11 Pages

High Efficiency Synchronous Rectification in SMPS

文件：304.9 Kbytes Page：11 Pages

HEXFET Power MOSFET

文件：396.11 Kbytes Page：11 Pages

High Efficiency Synchronous Rectification in SMPS

文件：304.9 Kbytes Page：11 Pages

High Efficiency Synchronous Rectification in SMPS

文件：304.9 Kbytes Page：11 Pages

HEXFET Power MOSFET

文件：396.11 Kbytes Page：11 Pages

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-

Heyco®-Tite EMC Brass Liquid Tight Cordgrips

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Advanced Process Technology Low On-Resistance

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Advanced Process Technology Low On-Resistance

文件：295.25 Kbytes Page：13 Pages