N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 40 A RDS(ON)

HEXFET Power MOSFET

文件：396.11 Kbytes Page：11 Pages

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-

Heyco®-Tite EMC Brass Liquid Tight Cordgrips

文件：340.26 Kbytes Page：1 Pages

Advanced Process Technology Low On-Resistance

文件：295.25 Kbytes Page：13 Pages

Advanced Process Technology Low On-Resistance

文件：295.25 Kbytes Page：13 Pages