IRFR4105ZTR价格

参考价格:¥1.9356

型号:IRFR4105ZTRPBF 品牌:International 备注:这里有IRFR4105ZTR多少钱,2026年最近7天走势,今日出价,今日竞价,IRFR4105ZTR批发/采购报价,IRFR4105ZTR行情走势销售排行榜,IRFR4105ZTR报价。
型号 功能描述 生产厂家 企业 LOGO 操作

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

N-Channel 6 0-V (D-S) MOSFET

文件:988.65 Kbytes Page:6 Pages

VBSEMI

微碧半导体

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

FAIRCHILD

仙童半导体

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

Advanced Planar Technology

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

INFINEON

英飞凌

true one-port, surface-acoustic-wave (SAW) resonator

文件:58.89 Kbytes Page:3 Pages

ACT

Advanced Planar Technology Low On-Resistance

文件:244.23 Kbytes Page:12 Pages

IRF

IRFR4105ZTR产品属性

  • 类型

    描述

  • 型号

    IRFR4105ZTR

  • 功能描述

    MOSFET N-CH 55V 30A DPAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-4 10:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
I
24+
TO252
5000
只做原装公司现货
IR
25+
SOT-252
10000
原装现货假一罚十
Infineon
24+
NA
3000
进口原装正品优势供应
IR
25+
TO-252
30000
全新原装现货,价格优势
IR
24+
TO-252
86200
一级代理/放心采购
NK/南科功率
2025+
TO-252
986966
国产
IR
1923+
TO-252
5000
正品原装品质假一赔十
IR
25+23+
TO252
12854
绝对原装正品全新进口深圳现货
International Rectifier
2022+
1
全新原装 货期两周
IR
23+
TO252
50000
全新原装正品现货,支持订货

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