IRFR3710价格

参考价格:¥2.1874

型号:IRFR3710ZPBF 品牌:INTERNATIONAL 备注:这里有IRFR3710多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR3710批发/采购报价,IRFR3710行情走势销售排行榜,IRFR3710报价。
型号 功能描述 生产厂家 企业 LOGO 操作

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤18mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

HEXFET짰 Power MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

KERSEMI

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

IRF

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

KERSEMI

HEXFET짰 Power MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

Infineon

英飞凌

采用 D-Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

HEXFET Power MOSFET

文件:4.70307 Mbytes Page:12 Pages

KERSEMI

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

HEXFET Power MOSFET

文件:4.70307 Mbytes Page:12 Pages

KERSEMI

HEXFET짰 Power MOSFET

文件:365.44 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

N-Channel 100-V (D-S) MOSFET

文件:1.02463 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

AnalogPower

General Purpose Packaging Tape

文件:14.65 Kbytes Page:2 Pages

3M

Nytye®Mounting Platforms

文件:241.29 Kbytes Page:1 Pages

Heyco

Secondary Side Synchronous Post Regulator

文件:226.91 Kbytes Page:12 Pages

LINER

凌力尔特

59A100V N-CHANNEL POWER MOSFET TRANSISTOR

文件:278.19 Kbytes Page:7 Pages

KIA

可易亚半导体

IRFR3710产品属性

  • 类型

    描述

  • 型号

    IRFR3710

  • 制造商

    International Rectifier

更新时间:2025-12-30 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
1495
优势代理渠道,原装正品,可全系列订货开增值税票
IR
25+
TO252
54648
百分百原装现货 实单必成 欢迎询价
IR
20+
DPAK
36900
原装优势主营型号-可开原型号增税票
ir
25+
500000
行业低价,代理渠道
IR
24+
TO252
990000
明嘉莱只做原装正品现货
IR
21+
TO-252
1321
只做原装,一定有货,不止网上数量,量多可订货!
IR原装特价
TO-252
2000
原装长期供货!
IR
TO-252
125000
一级代理原装正品,价格优势,长期供应!
IR
25+
40
公司优势库存 热卖中!
原装IR
21+
TO-252
10000
原装现货假一罚十

IRFR3710数据表相关新闻