IRFR3710价格

参考价格:¥2.1874

型号:IRFR3710ZPBF 品牌:INTERNATIONAL 备注:这里有IRFR3710多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR3710批发/采购报价,IRFR3710行情走势销售排行榜,IRFR3710报价。
型号 功能描述 生产厂家 企业 LOGO 操作

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤18mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

HEXFET짰 Power MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

IRF

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

KERSEMI

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

KERSEMI

HEXFET짰 Power MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

Infineon

英飞凌

采用 D-Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

HEXFET Power MOSFET

文件:4.70307 Mbytes Page:12 Pages

KERSEMI

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

HEXFET Power MOSFET

文件:4.70307 Mbytes Page:12 Pages

KERSEMI

HEXFET짰 Power MOSFET

文件:365.44 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

N-Channel 100-V (D-S) MOSFET

文件:1.02463 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

AnalogPower

General Purpose Packaging Tape

文件:14.65 Kbytes Page:2 Pages

3M

Nytye®Mounting Platforms

文件:241.29 Kbytes Page:1 Pages

Heyco

Secondary Side Synchronous Post Regulator

文件:226.91 Kbytes Page:12 Pages

LINER

凌力尔特

59A100V N-CHANNEL POWER MOSFET TRANSISTOR

文件:278.19 Kbytes Page:7 Pages

KIA

可易亚半导体

IRFR3710产品属性

  • 类型

    描述

  • 型号

    IRFR3710

  • 制造商

    International Rectifier

更新时间:2025-11-3 15:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
ir
2023+
原厂封装
50000
原装现货
INFINEON
23+
8000
只做原装现货
IR
24+
TO-252
3150
只做原厂渠道 可追溯货源
INFINEON
23+
7000
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
IR
TO-252
125000
一级代理原装正品,价格优势,长期供应!
IR
24+
N/A
8000
全新原装正品,现货销售
IR
24+
TO-252
140

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