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IRFR3710Z中文资料
IRFR3710Z数据手册规格书PDF详情
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
IRFR3710Z产品属性
- 类型
描述
- 型号
IRFR3710Z
- 制造商
International Rectifier
- 功能描述
100V 42.000A HR LEADED - Rail/Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
TO252 |
25000 |
十佳优质供应商，十年信誉，只做全新原装正品现货，以优势说话！ |
|||
INFINEON/英飞凌 |
24+ |
TO252 |
30000 |
IR代理现货原包原盒，假一罚十 |
|||
IR |
19+ |
TO-252 |
18500 |
||||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
Infineon(英飞凌) |
24+ |
TO252 |
3524 |
原厂直供,支持账期,免费供样,技术支持 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
35705 |
INFINEON/英飞凌全新特价IRFR3710ZTRPBF即刻询购立享优惠#长期有货 |
|||
IR |
16+ |
TO-252 |
6320 |
全新原装/深圳现货库2 |
|||
IR |
23+ |
SOT-252 |
65400 |
||||
IR |
13+ |
D-PAK |
4000 |
原装现货,假一赔百 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
18457 |
原装进口假一罚十 |
IRFR3710ZTRPBF 价格
参考价格：￥2.1874
IRFR3710Z 资料下载更多...
IRFR3710Z相关电子新闻
IRFR3710ZTRPBF分立半导体产品
全新原装，公司现货销售
2019-8-23IRFR3710ZTRPBF分立半导体产品
全新原装，公司现货销售
2019-8-20
IRFR3710Z 芯片相关型号
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- PDM41024SA15TSOITR
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- RTBH302116BDED63K9025G
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- TPS73632DBVR
- V80212SS08Q
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