IRFR3710Z价格

参考价格:¥2.1874

型号:IRFR3710ZPBF 品牌:INTERNATIONAL 备注:这里有IRFR3710Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR3710Z批发/采购报价,IRFR3710Z行情走势销售排行榜,IRFR3710Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR3710Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFR3710Z

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤18mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFR3710Z

100V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

KERSEMI

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

KERSEMI

HEXFET짰 Power MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

IRF

HEXFET짰 Power MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features co

Infineon

英飞凌

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

HEXFET Power MOSFET

文件:4.70307 Mbytes Page:12 Pages

KERSEMI

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

HEXFET Power MOSFET

文件:4.70307 Mbytes Page:12 Pages

KERSEMI

HEXFET짰 Power MOSFET

文件:365.44 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:365.44 Kbytes Page:12 Pages

IRF

N-Channel 100-V (D-S) MOSFET

文件:1.02463 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

AnalogPower

General Purpose Packaging Tape

文件:14.65 Kbytes Page:2 Pages

3M

Nytye®Mounting Platforms

文件:241.29 Kbytes Page:1 Pages

HeycoHeyco.

海科

Secondary Side Synchronous Post Regulator

文件:226.91 Kbytes Page:12 Pages

LINER

凌力尔特

59A100V N-CHANNEL POWER MOSFET TRANSISTOR

文件:278.19 Kbytes Page:7 Pages

KIA

可易亚半导体

IRFR3710Z产品属性

  • 类型

    描述

  • 型号

    IRFR3710Z

  • 制造商

    International Rectifier

更新时间:2025-9-19 15:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
25+
TO-252
10000
原装正品!!!优势库存!0755-83210901
IR
2023+
TO252
5800
进口原装,现货热卖
IR
25+
TO-252
5000
全新原装正品支持含税
INFINEON/英飞凌
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
IR
23+
TO-252
35890
IR
18+
TO-252
85600
保证进口原装可开17%增值税发票
IR
24+
TO-252
500943
免费送样原盒原包现货一手渠道联系
IR
24+
TO-252
37770
只做原装假一赔十
INFINEON/英飞凌
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
IR
22+
TO-252
8000
原装正品支持实单

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