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IRFR24价格
参考价格：￥2.6500
型号：IRFR2405PBF 品牌：IR 备注：这里有IRFR24多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR24批发/采购报价，IRFR24行情走势销售排行榜，IRFR24报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A?? Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF |   | ||
Surface Mount (IRFR2405) Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Surf | KERSEMI | | ||
Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | ||
Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | | ||
Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | ||
HEXFET Power MOSFET Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | | ||
55V N -Channel MOSFET Description Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 55V ID =34A (VGS = 10V) RDS(ON) | UMW 友台半导体 | | ||
Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | | ||
N-Channel Enhancement Mode MOSFET Application | « Adaptor » Charger '« Power management © SMPS Standby Power | | TECHPUBLIC 台舟电子 | | ||
Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A?? Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤26mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Power MOSFET Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. • Surfa | KERSEMI | | ||
HEXFET짰Power MOSFET Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | | ||
ADVANCED PROCESS TECHNOLOGY Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | ||
Surface Mount Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | ||
N-Channel MOSFET Transistor • DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤95mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
High frequency DC-DC converters Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | KERSEMI | | ||
HEXFET Power MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
HEXFET짰Power MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current • Lead-Free Applications • High frequency DC-DC converters | IRF | | ||
SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free | KERSEMI | | ||
N-Channel MOSFET Transistor 文件：334.89 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Surface Mount (IRFR2405) 文件：901.79 Kbytes Page：10 Pages | KERSEMI | | ||
Surface Mount (IRFR2405) 文件：226.77 Kbytes Page：11 Pages | IRF | | ||
Surface Mount (IRFR2405) | Infineon 英飞凌 | | ||
Advanced Process Technology 文件：226.77 Kbytes Page：11 Pages | IRF | | ||
Surface Mount (IRFR2405) 文件：226.77 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：226.77 Kbytes Page：11 Pages | IRF | | ||
Power MOSFET 文件：3.72412 Mbytes Page：10 Pages | LUCKY-LIGHT | | ||
Surface Mount (IRFR2407) 文件：3.72412 Mbytes Page：10 Pages | KERSEMI | | ||
Advanced Process Technology 文件：140.18 Kbytes Page：11 Pages | IRF | | ||
采用 D-Pak 封装的 75V 单 N 通道 IR MOSFET | Infineon 英飞凌 | | ||
Power MOSFET 文件：3.72412 Mbytes Page：10 Pages | LUCKY-LIGHT | | ||
ADVANCED PROCESS TECHNLOLGY 文件：386.64 Kbytes Page：11 Pages | IRF | | ||
ADVANCED PROCESS TECHNLOLGY 文件：386.64 Kbytes Page：11 Pages | IRF | | ||
HEXFET Power MOSFET 文件：3.71638 Mbytes Page：10 Pages | KERSEMI | | ||
Advanced Process Technology 文件：140.18 Kbytes Page：11 Pages | IRF | | ||
Surface Mount (IRFR2407) 文件：3.72412 Mbytes Page：10 Pages | KERSEMI | | ||
MOSFET N-CH 100V DPAK | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：MOSFET N-CH 100V DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个 | VishayVishay Siliconix 威世威世科技公司 | | ||
High frequency DC-DC converters 文件：282.07 Kbytes Page：10 Pages | IRF | | ||
High frequency DC-DC converters 文件：282.07 Kbytes Page：10 Pages | IRF | |
IRFR24产品属性
- 类型
描述
- 型号
IRFR24
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 55V 56A 3-Pin(2+Tab) DPAK
- 制造商
International Rectifier
- 功能描述
MOSFET N D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
16+ |
SOP-252 |
6263 |
全新原装/深圳现货库2 |
|||
IR |
2021+ |
D-PAK |
9450 |
原装现货。 |
|||
IR |
20+ |
TO-252 |
15100 |
全新原装公司现货
|
|||
NK/南科功率 |
9420 |
TO252 |
36520 |
国产南科平替供应大量 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
IR |
2021+ |
D-PAK |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
25+ |
TO-252 |
100 |
公司原装现货 |
IRFR24芯片相关品牌
IRFR24规格书下载地址
IRFR24参数引脚图相关
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IRFR24数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFR320TRPBF深圳原装进口无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2021-1-26IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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