Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A??

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤26mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET

Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. • Surfa

Surface Mount (IRFR2407)

文件：3.72412 Mbytes Page：10 Pages

Power MOSFET

文件：3.72412 Mbytes Page：10 Pages

Advanced Process Technology

文件：140.18 Kbytes Page：11 Pages

采用 D-Pak 封装的 75V 单 N 通道 IR MOSFET

Surface Mount

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

HEXFET짰Power MOSFET

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

ADVANCED PROCESS TECHNOLOGY

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

Power MOSFET

文件：3.72412 Mbytes Page：10 Pages

ADVANCED PROCESS TECHNLOLGY

文件：386.64 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNLOLGY

文件：386.64 Kbytes Page：11 Pages

HEXFET Power MOSFET

文件：3.71638 Mbytes Page：10 Pages

Advanced Process Technology

文件：140.18 Kbytes Page：11 Pages

Surface Mount (IRFR2407)

文件：3.72412 Mbytes Page：10 Pages

Extrusion

Available in natural or black Heat resistance High impact resistance High viscosity Low cost

CAPTIVE PANEL SCREWS

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Bandpass Filter

文件：24.57 Kbytes Page：2 Pages

DC/ACvoltage to 600V

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1KV ISOLATED 1W UNREGULATED DUAL OUTPUT DIP8 DC?껪C Converter

文件：298.16 Kbytes Page：2 Pages