Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A??

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤26mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET

Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. • Surfa

采用 D-Pak 封装的 75V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Surface Mount (IRFR2407)

文件：3.72412 Mbytes Page：10 Pages

Power MOSFET

文件：3.72412 Mbytes Page：10 Pages

Advanced Process Technology

文件：140.18 Kbytes Page：11 Pages

HEXFET짰Power MOSFET

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

ADVANCED PROCESS TECHNOLOGY

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

Surface Mount

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

Power MOSFET

文件：3.72412 Mbytes Page：10 Pages

ADVANCED PROCESS TECHNLOLGY

文件：386.64 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNLOLGY

文件：386.64 Kbytes Page：11 Pages

HEXFET Power MOSFET

文件：3.71638 Mbytes Page：10 Pages

Advanced Process Technology

文件：140.18 Kbytes Page：11 Pages

Surface Mount (IRFR2407)

文件：3.72412 Mbytes Page：10 Pages

MICROWAVE POWER GaAs FET?

DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. APPLICATION S to Ku band power amplifiers.

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Monolithic Triple 7.5 nS CRT Driver

文件：361.99 Kbytes Page：9 Pages

Monolithic Triple 7.5 nS CRT Driver

文件：361.99 Kbytes Page：9 Pages

SINGLE-SUPLLY DUAL COMPARATOR

文件：184.98 Kbytes Page：5 Pages