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IRFR2405价格
参考价格:¥2.6500
型号:IRFR2405PBF 品牌:IR 备注:这里有IRFR2405多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR2405批发/采购报价,IRFR2405行情走势销售排行榜,IRFR2405报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
IRFR2405 | Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A?? Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | ||
IRFR2405 | Surface Mount (IRFR2405) Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Surf | KERSEMI | ||
IRFR2405 | 55V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装 | Infineon 英飞凌 | ||
IRFR2405 | N-Channel MOSFET Transistor 文件:334.89 Kbytes Page:2 Pages | ISC 无锡固电 | ||
HEXFET Power MOSFET Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | |||
Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | |||
Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | |||
Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | |||
55V N -Channel MOSFET Description Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 55V ID =34A (VGS = 10V) RDS(ON) | UMW 友台半导体 | |||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | |||
Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | |||
Surface Mount (IRFR2405) 文件:901.79 Kbytes Page:10 Pages | KERSEMI | |||
Surface Mount (IRFR2405) | Infineon 英飞凌 | |||
Surface Mount (IRFR2405) 文件:226.77 Kbytes Page:11 Pages | IRF | |||
Surface Mount (IRFR2405) 文件:226.77 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:226.77 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:226.77 Kbytes Page:11 Pages | IRF | |||
HDTV ANTI-ALIASING FILTER 文件:24.98 Kbytes Page:2 Pages | KR | |||
CAPTIVE PANEL SCREWS 文件:395.93 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
SPEED DRIVER INTEGRATED SERIES 文件:583.68 Kbytes Page:1 Pages | ASSUN | |||
BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushed 文件:4.95567 Mbytes Page:1 Pages | ASSUN | |||
METAL BRUSH 文件:136.91 Kbytes Page:1 Pages | ASSUN |
IRFR2405产品属性
- 类型
描述
- 型号
IRFR2405
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 55V 56A 3-Pin(2+Tab) DPAK
- 制造商
International Rectifier
- 功能描述
MOSFET N D-PAK
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
20+ |
TO-252 |
6000 |
深圳原装无铅现货正规报关 |
|||
INFINEON/英飞凌 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
23+ |
TO-252 |
22000 |
原装现货假一罚十 |
|||
VISHAY/威世 |
24+ |
TO-252 |
501755 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
23+ |
TO-252 |
15000 |
专做原装正品,假一罚百! |
|||
IR |
06+ |
TO-252 |
100 |
公司原装现货 |
|||
IR |
24+ |
D-PAK |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
6000 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
18075 |
原装进口假一罚十 |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
IRFR2405规格书下载地址
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IRFR2405数据表相关新闻
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表面贴装型 N 通道 200 V 17A(Tc) 3W(Ta),140W(Tc) D-PAK(TO-252AA)
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联系人张生 电话19926428992 QQ1924037095
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs,Id) 235mΩ 10V,8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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