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IRFR210价格
参考价格：￥1.9500
型号：IRFR210BTF 品牌：FAIRCHILD 备注：这里有IRFR210多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR210批发/采购报价，IRFR210行情走势销售排行榜，IRFR210报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR210 | Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A) DESCRIPTION Third Generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straigh | IRF |   | |
IRFR210 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR210 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
IRFR210 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR210, SiHFR210) • Straight lead (IRFU210, SiHFU210) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9 | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR210 | isc N-Channel MOSFET Transistor 文件：320.64 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR210 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR210 | HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ω, ID = 2.6A | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR210, SiHFR210) • Straight lead (IRFU210, SiHFU210) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9 | VishayVishay Siliconix 威世威世科技公司 | | ||
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | Fairchild 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2.7A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 200V, ID= 30 A RDS(ON) | Bychip 百域芯 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 200V, ID= 30 A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET POWER MOSFET
| IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES Vos = 200V = 10A @Vos = 10v. B Roson $1350 @Vos= 10V 507-223 package. | | TECHPUBLIC 台舟电子 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
isc N-Channel MOSFET Transistor 文件：321.55 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
200V N-Channel MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Premier Supplier of Electronic Hardware 文件：5.0379 Mbytes Page：60 Pages | ABBATRON | | ||
Direct replacement for T3 쩌 Midget Edison Screw E10 文件：290.6 Kbytes Page：5 Pages | MARL | | ||
Thru-Bolts and Mounting Brackets 文件：286.71 Kbytes Page：3 Pages | OHMITE | | ||
M8 Female 3 Pin Field Attachable 文件：178.33 Kbytes Page：2 Pages | ALPHAWIRE | | ||
AUTO-DIP짰 Switch Automatically Insertable, Wave Solderable, Board Washable DIP Switch 文件：602.94 Kbytes Page：2 Pages | CTS 西迪斯 | |
IRFR210产品属性
- 类型
描述
- 型号
IRFR210
- 功能描述
MOSFET N-Chan 200V 2.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
DPAK |
3800 |
大批量供应优势库存热卖 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHILD/仙童 |
24+ |
TO 252 |
155861 |
明嘉莱只做原装正品现货 |
|||
IR |
25+ |
TO-252 |
35686 |
IR全新特价IRFR210TRPBF即刻询购立享优惠#长期有货 |
|||
IR |
20+ |
TO-252 |
1216 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
25+ |
TO263-2.5 |
18000 |
原厂直接发货进口原装 |
|||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
||||
IR |
24+ |
TO-252 |
27500 |
原装正品,价格最低! |
|||
IR |
25+ |
104 |
公司优势库存 热卖中!! |
IRFR210芯片相关品牌
IRFR210规格书下载地址
IRFR210参数引脚图相关
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- isd1420
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- IRFS250
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- IRFR330
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- IRFR320
- IRFR310
- IRFR230
- IRFR224TRPBF
- IRFR224TRLPBF
- IRFR224PBF
- IRFR224
- IRFR220TRRPBF
- IRFR220TRPBF
- IRFR220TRLPBF-CUTTAPE
- IRFR220TRLPBF
- IRFR220PBF
- IRFR220NTRPBF-CUTTAPE
- IRFR220NTRPBF
- IRFR220NTRLPBF-CUTTAPE
- IRFR220NTRLPBF
- IRFR220NPBF
- IRFR220
- IRFR214TRPBF
- IRFR214PBF
- IRFR214
- IRFR210TRPBF
- IRFR210TRLPBF
- IRFR210PBF
- IRFR210BTF
- IRFR1N60ATRPBF
- IRFR1N60APBF
- IRFR18N15DTRPBF
- IRFR18N15DTRLP
- IRFR18N15DPBF
- IRFR15N20DTRPBF
- IRFR15N20DTRLP
- IRFR15N20DPBF
- IRFR13N20DTRPBF
- IRFR13N20DTRLP
- IRFR13N20DPBF
- IRFR13N15DTRPBF
- IRFR13N15DPBF
- IRFR120ZTRPBF
- IRFR120ZTRLPBF
- IRFR120ZPBF
- IRFR120TRPBF-CUTTAPE
- IRFR120TRPBF
- IRFR120PBF
- IRFR120NTRPBF
- IRFR120
- IRFR110
- IRFR024
- IRFR020
- IRFR014
- IRFR012
- IRFR010
- IRFQ110
- IRFPG50
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
IRFR210数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFR320TRPBF深圳原装进口无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2021-1-26IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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