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IRFR210TR价格
参考价格：￥2.0665
型号：IRFR210TRLPBF 品牌：Vishay 备注：这里有IRFR210TR多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR210TR批发/采购报价，IRFR210TR行情走势销售排行榜，IRFR210TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR210TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 |   | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES Vos = 200V = 10A @Vos = 10v. B Roson $1350 @Vos= 10V 507-223 package. | | TECHPUBLIC 台舟电子 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：834.32 Kbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
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IRFR210TR产品属性
- 类型
描述
- 型号
IRFR210TR
- 功能描述
MOSFET N-Chan 200V 2.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INVENTRONICS/英飞特 |
12+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-252 |
|||
ir |
25+ |
500000 |
行业低价,代理渠道 |
||||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
||||
IR |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
55 |
252 |
VISHAY/威世 |
13 |
92 |
|||
IR |
05+ |
原厂原装 |
5100 |
只做全新原装真实现货供应 |
|||
IR |
2025+ |
TO-252 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
IR |
25+23+ |
TO-252 |
27519 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
TO-252 |
6200 |
新进库存/原装 |
|||
VISHAY/威世 |
24+ |
TO-252 |
5715 |
只做原装 有挂有货 假一罚十 |
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IRFR210TR规格书下载地址
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IRFR210TR数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFR320TRPBF深圳原装进口无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
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焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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