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位置：首页 > IC中文资料第1088页 > IRFR1N60A

IRFR1N60A价格

参考价格：￥3.1079

型号：IRFR1N60APBF 品牌：Vishay 备注：这里有IRFR1N60A多少钱，2024年最近7天走势，今日出价，今日竞价，IRFR1N60A批发/采购报价，IRFR1N60A行情走势销售排行榜，IRFR1N60A报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFR1N60A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSup

LUCKY-LIGHT

Lucky Light Electronic

LUCKY-LIGHT
IRFR1N60A

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=7Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFR1N60A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSup

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFR1N60A

PowerMOSFET(Vdss=600V,Rds(on)max=7.0ohm,Id=1.4A)

Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •PowerFactorCorrecti

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFR1N60A

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceand avalanchevoltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60A

SMPSMOSFET

文件：181.61 Kbytes Page：10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFR1N60A_V01

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceand avalanchevoltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60APBF

SMPSMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●PowerFactorCorrecti

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFR1N60APBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60ATR

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60ATRLPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60ATRPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60ATRRPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60A_15

PowerMOSFET

文件：2.6729 Mbytes Page：7 Pages

LUCKY-LIGHT

Lucky Light Electronic

LUCKY-LIGHT
IRFR1N60APBF

PowerMOSFET

文件：270.24 Kbytes Page：13 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60APBF-BE3AB

PowerMOSFET

文件：270.24 Kbytes Page：13 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60ATRLPBFA

PowerMOSFET

文件：270.24 Kbytes Page：13 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60ATRPBFA

PowerMOSFET

文件：270.24 Kbytes Page：13 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFR1N60ATRPBF-BE3AB

PowerMOSFET

文件：270.24 Kbytes Page：13 Pages

VishayVishay Siliconix

威世科技

Vishay
1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse
1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

IRFR1N60A产品属性

  • 类型

    描述

  • 型号

    IRFR1N60A

  • 功能描述

    MOSFET N-Chan 600V 1.4 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFR1N60A供应商更多...

更新时间：2024-6-3 19:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市汇莱威科技有限公司
IRFR1N60ATRPBF
VISHAY
SOT-252
68900
原包原标签100%进口原装常备现货!
询价
深圳市弘扬芯城科技有限公司
IRFR1N60ATRLPBF
VISHAY(威世)
23+
TO2523
6000
诚信服务，绝对原装原盘
询价
深圳中芯器材有限公司
IRFR1N60ATR
ir
dc0510
原厂封装
4000
INSTOCK:2000/tr/smd
询价
深圳市科恒伟业电子有限公司
IRFR1N60A
VISHAY
1822+
SOT-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市宇集芯电子有限公司
IRFR1N60A
IR
24+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
深圳市维尔达电子有限公司
IRFR1N60A
toshiba
2023+
TO-252
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市振宏微科技有限公司
IRFR1N60APBF
vishay
23+
NA
2460
专做原装正品,假一罚百!
询价
深圳市博浩通科技有限公司
IRFR1N60A
IR
23+
TO-252
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
深圳市富芯乐电子科技有限公司
IRFR1N60ATRPBF
VISHAY
22+
NA
54000
全新原装正品现货
询价
深圳市得捷芯城科技有限公司
IRFR1N60ATRPBF
IR
23+
NA/
1098
优势代理渠道,原装正品,可全系列订货开增值税票
询价

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IRFR1N60A规格书下载地址

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