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IRFR1N60A价格
参考价格：￥3.1079
型号：IRFR1N60APBF 品牌：Vishay 备注：这里有IRFR1N60A多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR1N60A批发/采购报价，IRFR1N60A行情走势销售排行榜，IRFR1N60A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR1N60A | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFR1N60A | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Sup | LUCKY-LIGHT | | |
IRFR1N60A | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =7Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFR1N60A | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Sup | KERSEMI | | |
IRFR1N60A | Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A) Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • Power Factor Correcti | IRF | | |
IRFR1N60A | Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPL | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR1N60A | SMPS MOSFET | Infineon 英飞凌 | | |
IRFR1N60A | SMPS MOSFET 文件：181.61 Kbytes Page：10 Pages | IRF | | |
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPL | VishayVishay Siliconix 威世威世科技公司 | | ||
SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptable Power Supply ● Power Factor Correcti | IRF | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：2.6729 Mbytes Page：7 Pages | LUCKY-LIGHT | | ||
Power MOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di | Littelfuse 力特 | | ||
Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar | FORMOSA 美丽微半导体 | | ||
JEDEC DO-7 PACKAGE JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow | UTC 友顺 | | ||
GOLD BONDED GERMANIUM DIODE Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance | ETCList of Unclassifed Manufacturers 未分类制造商 | |
IRFR1N60A产品属性
- 类型
描述
- 型号
IRFR1N60A
- 功能描述
MOSFET N-Chan 600V 1.4 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO 252 |
161314 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
20300 |
INFINEON/英飞凌原装特价IRFR1N60ATR即刻询购立享优惠#长期有货 |
|||
IR |
2450+ |
TO-252 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY/威世 |
25+ |
TO-252 |
2500 |
全新原装正品支持含税 |
|||
IR |
NEW |
TO-252 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
IR |
TO-252 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
24+ |
D-Pak |
8866 |
||||
VISHAY/SEMI |
22+ |
原厂封装 |
9025 |
原装正品，实单请联系 |
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IRFR1N60A规格书下载地址
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IRFR1N60A数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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联系人张生 电话19926428992 QQ1924037095
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
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2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405 PDF资料
2019-1-28
DdatasheetPDF页码索引
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