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IRFR1N60APBF价格
参考价格：￥3.1079
型号：IRFR1N60APBF 品牌：Vishay 备注：这里有IRFR1N60APBF多少钱，2024年最近7天走势，今日出价，今日竞价，IRFR1N60APBF批发/采购报价，IRFR1N60APBF行情走势销售排行榜，IRFR1N60APBF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR1N60APBF | PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技 |  |   |
IRFR1N60APBF | SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●PowerFactorCorrecti | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFR1N60APBF | PowerMOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET 文件：270.24 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | LittelfuseLittelfuse Inc. 力特力特公司 |  | | |
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | | |
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | |
IRFR1N60APBF产品属性
- 类型
描述
- 型号
IRFR1N60APBF
- 功能描述
MOSFET N-Chan 600V 1.4 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
23+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原装正品，支持实单 |
|||
IR |
1305+ |
SOT252 |
12000 |
||||
Vishay Siliconix |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
|||
VISHAY |
23+ |
D2Pak |
7750 |
全新原装优势 |
|||
VISHAY |
2020+ |
TO-252 |
3225 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
vishay |
23+ |
NA |
2460 |
专做原装正品,假一罚百! |
|||
IR/vish |
2016+ |
TO-252 |
6528 |
房间原装进口现货假一赔十 |
|||
VISHAY(威世) |
23+ |
TO-252 |
7845 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY/威世 |
23+ |
NA/ |
525 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
22+23+ |
TO252 |
28759 |
绝对原装正品全新进口深圳现货 |
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IRFR1N60APBF规格书下载地址
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IRFR1N60APBF数据表相关新闻
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表面贴装型N通道200V17A（Tc）3W（Ta），140W（Tc）D-PAK（TO-252AA）
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联系人张生电话19926428992QQ1924037095
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405PDF资料
2019-1-28
DdatasheetPDF页码索引
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