Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. • Ultr

MOSFET

Features VDS (V) = 55V ID= 44A (VGS=10V) RDS(ON)

采用 D-Pak 封装的 55V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

N-Channel MOSFET Transistor

文件：334.65 Kbytes Page：2 Pages

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

丝印代码：FR1205；MOSFET

Features VDS (V) = 55V ID= 44A (VGS=10V) RDS(ON)

丝印代码：FR1205；Ultra LowOn-Resistance

Features VDS (V) = 55V ID= 44A (VGS=10V) RDS(ON) 27m (VGS = 10V)

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

丝印代码：FR1205；N-Channel Enhancement Mode MOSFE

Features | ® Vos =60V,lo =28A Rosny

ULTRA LOW ON RESISTANCE

文件：398.79 Kbytes Page：11 Pages

ULTRA LOW ON RESISTANCE

文件：398.79 Kbytes Page：11 Pages

N-Channel 6 0-V (D-S) MOSFET

文件：988.71 Kbytes Page：6 Pages

Ultra Low On-Resistance

文件：4.02641 Mbytes Page：10 Pages

N-Channel 6 0-V (D-S) MOSFET

文件：988.67 Kbytes Page：6 Pages

32-Bit Duplex Controller/Driver with Digital Dimming Function

GENERAL DESCRIPTION The MSC1205 is a Bi-CMOS display driver for a 1/2-duty vacuum fluorescent display tube. It consists of a 64-bit shift register, latch circuits, a digital diming circuit, and drivers. FEATURES • Power Supply Voltage: 8 to 18V (built-in 5V regulator for logic) • Built-in 1-te

12-Bit Plus Sign mP Compatible A/D Converters

文件：327.46 Kbytes Page：18 Pages

130 MHz/85 MHz RGB Video Amplifier System with Blanking

文件：435.35 Kbytes Page：24 Pages

130 MHz/85 MHz RGB Video Amplifier System with Blanking

文件：435.35 Kbytes Page：24 Pages

Single Ended PWM Controller Featuring QR Operation and Soft Frequency Foldback

文件：163.36 Kbytes Page：20 Pages