Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

采用 D-Pak 封装的 55V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

N-Channel MOSFET Transistor

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Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A??

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HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues.

Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

ULTRA LOW ON RESISTANCE

文件：406.05 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：4.00212 Mbytes Page：10 Pages

Ultra Low On-Resistance

文件：406.05 Kbytes Page：11 Pages

ULTRA LOW ON RESISTANCE

文件：406.05 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：4.00212 Mbytes Page：10 Pages

Ultra Low On-Resistance

文件：406.05 Kbytes Page：11 Pages

N-Channel 60 V (D-S) MOSFET

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HEXFET짰 Power MOSFET

文件：406.05 Kbytes Page：11 Pages

1.4cm (0.55-inch) NTSC/PAL Color LCD Panel

Description The LCX024AKB is a 1.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation in NTSC/PAL mode. RGB dots are arranged in a delta pattern featuring h

Error Amplifier ICs

Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi

N-CHANNEL POWER MOSFET

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Silicon planar type

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