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IRFR024N价格
参考价格：￥1.5480
型号：IRFR024NPBF 品牌：INTERNATIONAL 备注：这里有IRFR024N多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR024N批发/采购报价，IRFR024N行情走势销售排行榜，IRFR024N报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR024N | Ultra Low On-Resistance Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr | KERSEMI |   | |
IRFR024N | MOSFET Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V) | EVVOSEMI 翊欧 | | |
IRFR024N | 采用 D-Pak 封装的 55V 单 N 通道 IR MOSFET | Infineon 英飞凌 | | |
IRFR024N | N-Channel MOSFET Transistor 文件：335.19 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR024N | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A?? 文件：178.33 Kbytes Page：10 Pages | IRF | | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, | IRF | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, | KERSEMI | | ||
The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V) | UMW 友台半导体 | | ||
MOSFET Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V) | EVVOSEMI 翊欧 | | ||
ULTRA LOW ON RESISTANCE 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
Ultra Low On-Resistance 文件：4.00212 Mbytes Page：10 Pages | KERSEMI | | ||
Ultra Low On-Resistance 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
ULTRA LOW ON RESISTANCE 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
Ultra Low On-Resistance 文件：4.00212 Mbytes Page：10 Pages | KERSEMI | | ||
Ultra Low On-Resistance 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.04371 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
HEXFET짰 Power MOSFET 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
PISTON SEALS DESCRIPTION The BECA 024 profile is a double acting composite piston seal composed of a profiled rubber ring and a filled PTFE or POM back-up ring. It meets the standards MIL-G-5514F and AS4716. APPLICATIONS Actuators Brakes systems Flight controls Engine systems Landing gear | FRANCEJOINT | | ||
Low Power, 5 MBd Digital CMOS Optocoupler Description ACPL-M21L (single channel SO-5 package), ACPL-021L (single channel SO-8 package) and ACPL-024L (dual channel SO-8 package) are optically-coupled logic gates. The detector IC has CMOS output stage and optical receiver input stage with built-in Schmitt trigger to provide logic-compatibl | AVAGO 安华高 | | ||
PC board mounting and direct insert mounting available 文件：1.60394 Mbytes Page：3 Pages | HUAXINAN 华兴安 | | ||
Low Power, 5-MBd Digital CMOS Optocoupler 文件：721.15 Kbytes Page：16 Pages | BOARDCOM 博通 | | ||
Low Power, 5-MBd Digital CMOS Optocoupler 文件：721.15 Kbytes Page：16 Pages | BOARDCOM 博通 | |
IRFR024N产品属性
- 类型
描述
- 型号
IRFR024N
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK
- 制造商
International Rectifier
- 功能描述
MOSFET N D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XBLW芯伯乐 |
24+ |
TO-252-2L |
50000 |
品牌代理,价格优势,技术支持!!可直接对标进口品牌! |
|||
IR |
25+ |
TO-252 |
35679 |
IR全新特价IRFR024NTRPBF即刻询购立享优惠#长期有货 |
|||
INFINEON |
21+ |
TO-252 |
6000 |
十年信誉,只做原装,有挂就有现货! |
|||
INFINEON |
2430+ |
TO-252 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
21+ |
TO-252 |
6880 |
只做原装,质量保证 |
|||
INFINEON |
23+ |
TO-252 |
40000 |
正规渠道,只有原装! |
|||
IR |
25+ |
TO-252 |
22000 |
原装现货假一罚十 |
|||
IR |
24+ |
TO-252 |
20540 |
保证进口原装现货假一赔十 |
|||
INFINEON |
25+ |
TO-252 |
15000 |
原装正品!!!优势库存!0755-83210901 |
|||
INFINEON |
25+ |
TO-252 |
918000 |
明嘉莱只做原装正品现货 |
IRFR024N规格书下载地址
IRFR024N参数引脚图相关
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- IRFPE30PBF
- IRFPE30
- IRFPC60
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- IRFPC48
- IRFPC40
- IRFPC30
IRFR024N数据表相关新闻
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
DdatasheetPDF页码索引
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