位置：IRFR024NPBF > IRFR024NPBF详情
IRFR024NPBF中文资料
IRFR024NPBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
• Ultra Low On-Resistance
• Surface Mount (IRFR024N)
• Straight Lead (IRFU024N)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
IRFR024NPBF产品属性
- 类型
描述
- 型号
IRFR024NPBF
- 功能描述
MOSFET 55V 1 N-CH HEXFET 75mOhms 13.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
D-PAK |
65400 |
||||
Infineon |
23+/24+ |
TO-252 |
9865 |
原装优势现货,用芯服务(fang) |
|||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
23+ |
SOT-252 |
18689 |
||||
IR |
17+ |
NA |
6200 |
100%原装正品现货 |
|||
IR |
23+ |
D-PAK |
5000 |
原装正品,假一罚十 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IR |
2020+ |
D-PAK |
9800 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
IRFR024NPBF 价格
参考价格：￥1.5480
IRFR024NPBF 资料下载更多...
IRFR024NPBF 芯片相关型号
- 357-031-445-158
- APE2901
- APE2901G-22
- APE2901G-25
- APE2901G-26
- APE2901G-27
- APE2901G-28
- APE2901G-29
- APE2901G-30
- APE2901G-31
- APE2901G-32
- APE2902
- APE2903
- APE2F-2M-10-Z
- ATS-03E-79-C3-R0
- IRFR024_17
- IRFR024N
- IRFR024NTRPBF
- IRFR024PBF
- IRFR024R
- IRFR024TR
- IRFR024TRL
- MC14504B
- MC14504BCPG
- MC14504BDG
- MC14504BDTG
- MC14504BFG
KERSEMI相关芯片制造商
Datasheet数据表PDF页码索引
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Kersemi Electronic Co., Ltd.
中文资料: 3917条
