| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFPS37N50APBF. | Power MOSFET • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC | VISHAYVishay Siliconix 威世威世科技公司 |   | |
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | | ||
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.13廓 , ID = 36A ) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
ThroughHole |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
1415+ |
TO-252 |
28500 |
全新原装正品,优势热卖 |
|||
INR |
23+ |
TO-3 |
44353 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
23+ |
8000 |
263 |
专注配单,只做原装进口现货 |
|||
FSC |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
IR |
24+ |
SOT-223 |
59 |
||||
IR |
05+ |
原厂原装 |
4291 |
只做全新原装真实现货供应 |
|||
IR |
22+ |
263 |
6000 |
终端可免费供样,支持BOM配单 |
|||
Vishay Dale |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
23+ |
65480 |
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IRFPS37N50APBF.规格书下载地址
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IRFPS37N50APBF.数据表相关新闻
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表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
DdatasheetPDF页码索引
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