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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFPS37N50APBF. | Power MOSFET • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 |   | |
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | | ||
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：182.7 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：374.03 Kbytes Page：3 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-247 |
6000 |
只做原装，欢迎询价，量大价优 |
|||
IR |
23+ |
TO-247 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-247 |
7000 |
||||
IR |
2447 |
TO-247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
24+ |
TO-247 |
42000 |
郑重承诺只做原装进口现货 |
|||
IR国际整流器 |
25+23+ |
TO-247 |
25234 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
IR |
22+ |
TO-247 |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
23+24 |
TO-4P |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
IR |
24+ |
TO-247 |
6430 |
原装现货/欢迎来电咨询 |
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IRFPS37N50APBF.数据表相关新闻
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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DdatasheetPDF页码索引
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