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IRFPS37N50价格
参考价格：￥26.5592
型号：IRFPS37N50APBF 品牌：VISHAY 备注：这里有IRFPS37N50多少钱，2026年最近7天走势，今日出价，今日竞价，IRFPS37N50批发/采购报价，IRFPS37N50行情走势销售排行榜，IRFPS37N50报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFPS37N50 | Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF |   | |
IRFPS37N50 | HEXFET® Power MOSFET Benefits\n● Low Gate Charge Qg results in Simple\n Drive Requirement\n● Improved Gate, Avalanche and Dynamic\n dv/dt Ruggedness\n● Fully Characterized Capacitance and\n Avalanche Voltage and Current\n● Effective Coss Specified (See AN\n 1001) | INFINEON 英飞凌 | | |
N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 36A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 36A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) | ISC 无锡固电 | | ||
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.13廓 , ID = 36A ) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | | ||
Power MOSFET • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：182.7 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：374.03 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：182.7 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：182.7 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 | |
IRFPS37N50产品属性
- 类型
描述
- 型号
IRFPS37N50
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
26+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
24+ |
SOT-223 |
59 |
||||
INR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
|||
IR |
23+ |
263 |
7000 |
||||
IR |
23+ |
SUPER-247 |
65400 |
||||
VISHAY |
20+ |
450 |
SUPER-247-3 (TO-274AA) |
||||
INR |
23+ |
TO-3 |
44353 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
2021+ |
TO-247 |
16800 |
全新原装正品,自家优势现货 |
|||
vishay |
2021 |
super-247 |
5000 |
全新原装公司现货
|
|||
IR |
22+ |
263 |
6000 |
终端可免费供样,支持BOM配单 |
IRFPS37N50规格书下载地址
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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