位置：首页 > IC中文资料第11703页 > SIHFPS37N50A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFPS37N50A | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SIHFPS37N50A | N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 36A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · High Speed Power Switching | ISC 无锡固电 | | |
SIHFPS37N50A | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
SiHFPS37N50A | Power MOSFET 文件：182.7 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHFPS37N50A | Power MOSFET 文件：204.64 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：204.64 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：182.7 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：182.7 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：204.64 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | | ||
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.13廓 , ID = 36A ) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS | IRF | |
SIHFPS37N50A产品属性
- 类型
描述
- 型号
SIHFPS37N50A
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
VISHAY/威世 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
SIAI |
24+ |
DFN3X3-8L |
9000000 |
一级代理/放心采购 |
|||
VISHAY/威世 |
25+ |
Super-247 |
60000 |
原装订货实单确认 |
|||
SAMSUNG |
22+ |
SIL-10 |
3000 |
原装正品,支持实单 |
|||
SAM |
25+ |
DIP-28 |
394 |
全新原装正品支持含税 |
|||
24+ |
850 |
真实现货库存 |
|||||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
SAMSU |
25+ |
SOP3.9 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SAMSUNG |
2024+ |
DIP |
50000 |
原装现货 |
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SIHFPS37N50A规格书下载地址
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