位置：首页 > IC中文资料第6574页 > IRFPS35N50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFPS35N50L FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-f | VishayVishay Siliconix 威世威世科技公司 |   | ||
HEXFET Power MOSFET Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Low Trr and Soft Diode Recovery High Performance Optimised Anti-parallel Diode Application | IRF | | ||
SMPS MOSFET
| IRF | | ||
IRFPS35N50L FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-f | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET | Infineon 英飞凌 | | ||
HiPerFET Power MOSFETs HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Molding epoxies meet UL 94 V-0 flammability classification • Low RDS (on) HDMOSTM process • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifi | IXYS 艾赛斯 | |
IRFPS35N50产品属性
- 类型
描述
- 型号
IRFPS35N50
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
HEXFETPower MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
TO274AA |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
TO247 |
60000 |
||||
IR |
24+ |
原厂封装 |
900 |
原装现货假一罚十 |
|||
IR |
23+ |
TO247 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
23+ |
TO-247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY |
25+ |
TO-247 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
|||
IR |
1923+ |
TO-247 |
3689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
IR |
23+ |
TO247 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
06+ |
TO-247 |
800 |
全新原装 绝对有货 |
IRFPS35N50芯片相关品牌
IRFPS35N50规格书下载地址
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IRFPS35N50数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFP4668PBF 全新原装现货
IRFP4668PBF
2022-6-27IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFP460PBF
IRFP460PBF
2021-5-20IRFP460PBF 原装正品 现货供应
IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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