位置：首页 > IC中文资料第1145页 > IRFPS30N60KPBF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFPS30N60KPBF | SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●Lead-Free Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitan | IRF International Rectifier |  |   |
BIDW30N60TInsulatedGateBipolarTransistor(IGBT) GeneralInformation TheBourns®ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris | BournsBourns Electronic Solutions 伯恩斯 |  | | |
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode 文件：1.9827 Mbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
ACTIVE/SYNCHRONOUSRECTIFIER 文件：672.35 Kbytes Page：15 Pages | DIODESDiodes Incorporated 美台半导体 |  | | |
N-ChannelEnhancementModeMOSFET 文件：281.61 Kbytes Page：4 Pages | DACO DACO SEMICONDUCTOR CO.,LTD. |  | | |
N-ChannelEnhancementModeMOSFET 文件：264.01 Kbytes Page：4 Pages | DACO DACO SEMICONDUCTOR CO.,LTD. | | |
IRFPS30N60KPBF产品属性
- 类型
描述
- 型号
IRFPS30N60KPBF
- 功能描述
MOSFET N-Chan 600V 30 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
3950 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
23+ |
TO-3P |
8000 |
专注配单,只做原装进口现货 |
|||
VishayIR |
24+ |
Super247 |
268 |
||||
IR |
23+ |
SUPER-247 |
35890 |
||||
IR/VISAY |
23+ |
TO-247 |
55250 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VISHAY |
23+ |
TO247 |
8000 |
只做原装现货 |
|||
VISHAY |
23+ |
TO247 |
7000 |
||||
Vishay Siliconix |
22+ |
TO274AA |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
IR |
24+ |
原厂封装 |
69 |
原装现货假一罚十 |
IRFPS30N60KPBF芯片相关品牌
IRFPS30N60KPBF规格书下载地址
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IRFPS30N60KPBF数据表相关新闻
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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2021-3-12
DdatasheetPDF页码索引
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