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IRFPC50价格
参考价格：￥10.2735
型号：IRFPC50APBF 品牌：VISHAY 备注：这里有IRFPC50多少钱，2025年最近7天走势，今日出价，今日竞价，IRFPC50批发/采购报价，IRFPC50行情走势销售排行榜，IRFPC50报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFPC50 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFPC50 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFPC50 | MOS(场效应管) | Infineon 英飞凌 | | |
IRFPC50 | Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A) 文件：164.56 Kbytes Page：6 Pages | IRF | | |
Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A) SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Su | IRF | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A) Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The | IRF | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rating • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rating • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/d | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：224.27 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：224.27 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰Power MOSFET 文件：182.39 Kbytes Page：8 Pages | IRF | | ||
HEXFET Power MOSFET 文件：1.59553 Mbytes Page：8 Pages | IRF | |
IRFPC50产品属性
- 类型
描述
- 型号
IRFPC50
- 功能描述
MOSFET N-Chan 600V 11 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
17138 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY |
24+ |
TO-247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
24+ |
TO 3P |
161355 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
TO-247 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
IR |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
高钦 |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
IR/国际整流器 |
23+ |
TO-247 |
12700 |
买原装认准中赛美 |
|||
Vishay |
23+ |
NA |
16949 |
专做原装正品,假一罚百! |
|||
ir |
2023+ |
原厂封装 |
50000 |
原装现货 |
IRFPC50芯片相关品牌
IRFPC50规格书下载地址
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IRFPC50数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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联系人张生 电话19926428992 QQ1924037095
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFP460PBF
IRFP460PBF
2021-5-20IRFP460PBF 原装正品 现货供应
IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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