Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -23A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.117Ω(Max)@VGS= -10V DESCRIPTION · Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and rel

isc P-Channel MOSFET Transistor

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HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

文件：241.76 Kbytes Page：9 Pages

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

1:18 LVCMOS FANOUT BUFFER

1:18 LVCMOS Fanout Buffer The MPC9140 is a 1:18 LVCMOS fanout buffer targeted to support Intel based Pentium II™ microprocessor chip sets. The device features 18 low skew outputs optimized to drive the clock inputs of standard unbuffered SDRAM modules. Standard unbuffered SDRAM modules require fo

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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Precision Micropower Shunt Voltage Reference

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