P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

19A, 100V, 0.200 Ohm, P-Channel Power MOSFET

This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching c

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliablility

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datash

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -19A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

100 V, P-channel power MOSFET

isc N-Channel MOSFET Transistor

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Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datash

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -23A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.117Ω(Max)@VGS= -10V DESCRIPTION · Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and rel

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

isc P-Channel MOSFET Transistor

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ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

文件：241.76 Kbytes Page：9 Pages

Power MOSFET

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HEXFET짰 Power MOSFET

文件：1.73601 Mbytes Page：8 Pages

MOSFET P-CH -100V HEXFET MOSFET

1:18 LVCMOS FANOUT BUFFER

1:18 LVCMOS Fanout Buffer The MPC9140 is a 1:18 LVCMOS fanout buffer targeted to support Intel based Pentium II™ microprocessor chip sets. The device features 18 low skew outputs optimized to drive the clock inputs of standard unbuffered SDRAM modules. Standard unbuffered SDRAM modules require fo

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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Precision Micropower Shunt Voltage Reference

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