P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliablility

19A, 100V, 0.200 Ohm, P-Channel Power MOSFET

This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching c

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datash

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -19A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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100 V, P-channel power MOSFET

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datash

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -23A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.117Ω(Max)@VGS= -10V DESCRIPTION · Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and rel

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

isc P-Channel MOSFET Transistor

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ADVANCED PROCESS TECHNOLOGY

文件：241.76 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：241.76 Kbytes Page：9 Pages

HEXFET짰 Power MOSFET

文件：1.73601 Mbytes Page：8 Pages

Power MOSFET

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MOSFET P-CH -100V HEXFET MOSFET

Triple Output Multi-Range DC Power Supplies

Features and benefits - Three independent galvanically isolated, floating output channels providing up to 100 W per channel or 300 W total - High power density, compact 2U half-rack form factor - Multi-ranging operation delivers rated power at multiple voltage/current combinations - Low ou

OVEN CONTROLLED CRYSTAL OSCILLTORS (OCXO)

[NDK] Main applications : Communications equipment, Measuring instruments etc. Features : 1. Excellent aging characteristics 2. Wide frequency range (9168A Series) 3. Anti-microphonic noise (9140A-BGE71, 9140A-CEE70)

Hall Effect Sensor IC

General Description The APX9140 is an integrated Hall Effect Sensor IC designed for electric commutation of DC brushless motor applications. The APX9140 still can operate at as low as 3 volts. The APX9140 is available in low cost TO -92M package with 3 different magnetic ranks. Features

Two Channel Quadrature Output with Index Pulse

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Easy to mount

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