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IRFP460价格
参考价格：￥60.1767
型号：IRFP460 品牌：Vishay 备注：这里有IRFP460多少钱，2024年最近7天走势，今日出价，今日竞价，IRFP460批发/采购报价，IRFP460行情走势销售排行榜，IRFP460报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP460 | 20A,500V,0.270Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
IRFP460 | PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A) Features ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMoutingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements. | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFP460 | PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRFP460issuppliedi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | |
IRFP460 | N-CHANNEL500V-0.22ohm-20A-TO-247PowerMESH]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.22Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
IRFP460 | MegaMOS-PowerMOSFET MegaMOS™PowerMOSFETN-ChannelEnhancementMode,HDMOS™Family Features ●Repetitiveavalancheenergyrated ●Fastswitchingtimes ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●HighCommutatingdv/dtRating Applications ●SwitchingPowerSupplies ●Motorcontr | IXYS IXYS Integrated Circuits Division |  | |
IRFP460 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技 |  | |
IRFP460 | iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFP460 | PowerMOSFET 文件：169.48 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRFP460 | PowerMOSFET 文件：203.58 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
IRFP460 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SwitchModePower | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET(Vdss=500V,Rds(on)max=0.27ohm,Id=20A) Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageand | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET(Vdss=500V,Rds(on)max=0.27ohm,Id=20A) Description ThirdGenerationHEXFET®sfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevel | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
DSeriesPowerMOSFET FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry | VishayVishay Siliconix 威世科技 | | | |
DSeriesPowerMOSFETs FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技 | | | |
DSeriesPowerMOSFETs FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技 | | | |
DSeriesPowerMOSFET FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry | VishayVishay Siliconix 威世科技 | | | |
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A) Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技 | | | |
HEXFETPowerMOSFET Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET(Vdss=500V,Rds(on)max=0.24ohm,Id=20A) SMPSMOSFET Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent EffectiveCossspecified(SeeAN1001) Applications SwitchModePowerSupply | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS | VishayVishay Siliconix 威世科技 | | | |
HEXFETPowerMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterru | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A) Description ThirdGenerationHEXFET®sfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevel | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技 | | | |
Dynamicdv/dtRating,RepetitiveAvalancheRated,IsolatedCentralMountingHole,FastSwitching,EaseofParalleling,SimpleDriveRequirements,Lead
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
20A,500VHeatsinkN-ChannelTypePowerMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-3P | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 |  | | |
PowerMOSFET 文件：169.48 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：203.58 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMOSFETTransistor 文件：369.13 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SMPSMOSFET(VDSS=500V,RDS(on)max=0.27廓,ID=20A) 文件：195.24 Kbytes Page：9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
iscN-ChannelMOSFETTransistor 文件：324.81 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSFET 文件：212.87 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
包装：管件 描述：PLANAR \u003e= 100V 分立半导体产品 晶体管 - FET，MOSFET - 单个 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：419.75 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
DSeriesPowerMOSFET 文件：214.41 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：POWER MOSFET TO-247AC, 270 M @ 1 | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.13914 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：383.56 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.13914 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：383.56 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：383.56 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：203.58 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
N-Channel500V(D-S)SuperJunctionPowerMOSFET 文件：1.96169 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
HighAccuracy,100kHzand1MHzVoltagetoFrequencyConverterss 文件：854.99 Kbytes Page：4 Pages | INTRONICS Intronics Power, Inc. |  | | |
PICOSMFVeryFast-ActingTypeFuse459Series 文件：26.27 Kbytes Page：1 Pages | LittelfuseLittelfuse Inc. 力特力特公司 |  | | |
HighAccuracy,100kHzand1MHzVoltagetoFrequencyConverters 文件：52.04 Kbytes Page：1 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
TRESCONFIGURACIONESB횁SICASPARAELCONTROLDELMEDIDOR 文件：269.15 Kbytes Page：2 Pages | PENTAIRPentair plc. All rights reserved. 滨特尔滨特尔集团 |  | | |
HighAccuracy,100kHzand1MHzVoltagetoFrequencyConverterss 文件：854.99 Kbytes Page：4 Pages | INTRONICS Intronics Power, Inc. | | |
IRFP460产品属性
- 类型
描述
- 型号
IRFP460
- 功能描述
MOSFET N-Chan 500V 20 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC/ON |
23+ |
原包装原封 □□ |
58993 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
|||
VISHAY |
21+ |
TO-247 |
10080 |
公司只做原装,诚信经营 |
|||
IR |
21+ |
TO-247 |
500 |
全新、原装 |
|||
IR |
1922+ |
TO-247 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
2016+ |
TO-247 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Vishay Siliconix |
23+ |
TO-247AC |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
VISHAY |
1408+ |
TO-247 |
10000 |
绝对原装进口现货可开增值税发票 |
|||
IR |
20+ |
TO-3P |
3800 |
全新原装现货欢迎来询 |
|||
FAIRCHILD |
23+ |
TO247 |
2505 |
原厂原装正品 |
|||
FSC |
23+ |
TO-247 |
6680 |
全新原装优势 |
IRFP460芯片相关品牌
IRFP460规格书下载地址
IRFP460参数引脚图相关
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- IRFP9140PBF
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- IRFP4868PBF
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- IRFP4710PBF
- IRFP470
- IRFP4668PBF
- IRFP462
- IRFP460PBF
- IRFP460LCPBF
- IRFP460BPBF
- IRFP460APBF
- IRFP460A
- IRFP4568PBF
- IRFP453
- IRFP452
- IRFP451
- IRFP450PBF
- IRFP450LCPBF
- IRFP450APBF
- IRFP450A
- IRFP450
- IRFP448PBF
- IRFP448
- IRFP4468PBF
- IRFP4410ZPBF
- IRFP440PBF
- IRFP440
- IRFP4368PBF
- IRFP4332PBF
- IRFP4321PBF
- IRFP4310ZPBF
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- IRFP4127PBF
- IRFP362
- IRFP360
- IRFP354
- IRFP353
- IRFP352
- IRFP351
- IRFP350
- IRFP344
- IRFP340
- IRFP264
- IRFP260
- IRFP257
- IRFP256
- IRFP255
IRFP460数据表相关新闻
IRFP4468PBF原装现货
IRFP4468PBF原装正品
2021-8-10IRFP460PBF
IRFP460PBF
2021-5-20IRFP460 VISHAY/威世 TO-247 MOS(场效应管) 原装正品
原装正品现货供应0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-24IRFP460PBF 原装正品 现货供应
IRFP460PBF原装现货供应0755-2889238913713856319QQ:2639752116
2021-3-12IRFP4468
IRFP4468，当天发货0755-82732291全新原装现货或门市自取.
2020-9-20IRFP4568
IRFP4568,TO-247，当天发货0755-82732291全新原装现货或门市自取.
2020-9-20
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