20A, 500V, 0.270 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Features ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mouting Hole ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements.

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied i

N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.22 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALA

MegaMOS - Power MOSFET

MegaMOS™ Power MOSFET N-Channel Enhancement Mode, HDMOS™ Family Features ● Repetitive avalanche energy rated ● Fast switching times ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● High Commutating dv/dt Rating Applications ● Switching Power Supplies ● Motor contr

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) • Fast Switching

Power MOSFET

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Power MOSFET

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SEMICONDUCTORS

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Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

D Series Power MOSFET

FEATURES • Optimal Design    - Low Area Specific On-Resistance    - Low Input Capacitance (Ciss)    - Reduced Capacitive Switching Losses    - High Body Diode Ruggedness    - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation    - Low Cost    - Simple Gate Drive Circuitry   

D Series Power MOSFETs

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

D Series Power MOSFETs

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

D Series Power MOSFET

FEATURES • Optimal Design    - Low Area Specific On-Resistance    - Low Input Capacitance (Ciss)    - Reduced Capacitive Switching Losses    - High Body Diode Ruggedness    - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation    - Low Cost    - Simple Gate Drive Circuitry   

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.27Ω (Max) • Fast Switching

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

HEXFET Power MOSFET

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

Power MOSFET(Vdss=500V, Rds(on)max=0.24ohm, Id=20A)

SMPS MOSFET Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN1001) Applications Switch Mode Power Supply

Power MOSFET

Power MOSFET FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective CossSpecified • Lead (Pb)-free Available APPLICATIONS

Power MOSFET

Power MOSFET FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective CossSpecified • Lead (Pb)-free Available APPLICATIONS

HEXFET Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN1001) Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterru

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

Dynamic dv/dt Rating, Repetitive Avalanche Rated, Isolated Central Mounting Hole, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Lead

20A,500V Heatsink N-Channel Type Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-3P

Power MOSFET

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Power MOSFET

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27廓 , ID=20A )

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Power MOSFET

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包装：管件 描述：PLANAR \u003e= 100V 分立半导体产品 晶体管 - FET，MOSFET - 单个

isc N-Channel MOSFET Transistor

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D Series Power MOSFET

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：POWER MOSFET TO-247AC, 270 M @ 1

Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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N-Channel 500V (D-S) Super Junction Power MOSFET

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WIPER SEALS

DESCRIPTION The BECA 460 profile is a single acting wiper seal composed of a rubber wiping lip. APPLICATIONS Agriculture Mobile machinery Material handling - Lifting Hydraulic cylinders

Premier Supplier of Electronic Hardware

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High Accuracy, 100kHz and 1MHz Voltage to Frequency Converterss

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PICO SMF Very Fast-Acting Type Fuse 459 Series

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High Accuracy, 100kHz and 1MHz Voltage to Frequency Converters

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