Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

Power MOSFET

• Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current;

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

isc N-Channel MOSFET Transistor

文件：369.13 Kbytes Page：2 Pages

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27廓 , ID=20A )

文件：195.24 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：324.81 Kbytes Page：2 Pages

Power MOSFET

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包装：管件 描述：PLANAR \u003e= 100V 分立半导体产品 晶体管 - FET，MOSFET - 单个

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied i

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

Square Type

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Square Type

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ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

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