Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

Dynamic dv/dt Rating, Repetitive Avalanche Rated, Isolated Central Mounting Hole, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Lead

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

20A,500V Heatsink N-Channel Type Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-3P

N-Channel 500V (D-S) Super Junction Power MOSFET

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Power MOSFET

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WIPER SEALS

DESCRIPTION The BECA 460 profile is a single acting wiper seal composed of a rubber wiping lip. APPLICATIONS Agriculture Mobile machinery Material handling - Lifting Hydraulic cylinders

Premier Supplier of Electronic Hardware

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High Accuracy, 100kHz and 1MHz Voltage to Frequency Converterss

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PICO SMF Very Fast-Acting Type Fuse 459 Series

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High Accuracy, 100kHz and 1MHz Voltage to Frequency Converters

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