Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.27Ω (Max) • Fast Switching

Power MOSFET

• Ultra low gate charge\n• Reduced gate drive requirement\n• Enhanced 30 V VGS rating;

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Power MOSFET

文件：1.13914 Mbytes Page：9 Pages

Power MOSFET

文件：383.56 Kbytes Page：11 Pages

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

HEXFET Power MOSFET

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

Power MOSFET

文件：1.13914 Mbytes Page：9 Pages

Power MOSFET

文件：383.56 Kbytes Page：11 Pages

Power MOSFET

文件：383.56 Kbytes Page：11 Pages

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied i

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

Square Type

文件：31.65 Kbytes Page：1 Pages

Square Type

文件：31.86 Kbytes Page：1 Pages

ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

文件：100.14 Kbytes Page：6 Pages