IRFL4310价格

参考价格:¥1.3753

型号:IRFL4310PBF 品牌:International 备注:这里有IRFL4310多少钱,2025年最近7天走势,今日出价,今日竞价,IRFL4310批发/采购报价,IRFL4310行情走势销售排行榜,IRFL4310报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFL4310

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFL4310

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFL4310

100V 单个 N 通道 HEXFET Power MOSFET, 采用 SOT-223 封装

Infineon

英飞凌

HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 0.20廓 , ID = 1.6A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Advanced Process Technology

文件:667.61 Kbytes Page:9 Pages

IRF

封装/外壳:TO-261-4,TO-261AA 包装:管件 描述:MOSFET N-CH 100V SOT223 分立半导体产品 晶体管 - FET,MOSFET - 单个

Infineon

英飞凌

Advanced Process Technology

文件:667.61 Kbytes Page:9 Pages

IRF

N-Channel 30 V (D-S) MOSFET

文件:1.79548 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power Supply Cord with IT Power (Mains) Plug 3-pole, Straight

文件:240.69 Kbytes Page:2 Pages

SCHURTER

硕特

Networks

文件:67.04 Kbytes Page:1 Pages

Bourns

伯恩斯

Resistor Network

文件:30.78 Kbytes Page:2 Pages

Bourns

伯恩斯

Wideband Bias Chokes

文件:198.78 Kbytes Page:2 Pages

COILCRAFT

Networks

文件:66.94 Kbytes Page:1 Pages

Bourns

伯恩斯

IRFL4310产品属性

  • 类型

    描述

  • 型号

    IRFL4310

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET N-CH 100V 2.2A 4-Pin(3+Tab) SOT-223

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N SOT-223

更新时间:2025-9-29 13:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
SOT-223
4500
全新原装、诚信经营、公司现货销售
Infineon(英飞凌)
24+
SOT-223
9555
支持大陆交货,美金交易。原装现货库存。
IR
24+
SOT-223
500758
免费送样原盒原包现货一手渠道联系
IR
24+
SOT-223
579
只做原厂渠道 可追溯货源
IR
16+
SOT-223
36000
原装正品,优势库存81
IR
24+
SOT-223
10000
只做原装欢迎含税交易,假一赔十,放心购买
IR
24+
原厂封装
1840
原装现货假一罚十
IR(国际整流器)
2405+
Original
50000
只做原装优势现货库存,渠道可追溯
INFINEON/英飞凌
2019+
SOT223
78550
原厂渠道 可含税出货
IRFL4310
5390
5390

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