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IRFL4310PBF中文资料
IRFL4310PBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
● Surface Mount
● Dynamic dv/dt Rating
● Fast Switching
● Ease of Paralleling
● Advanced Process Technology
● Ultra Low On-Resistance
● Lead-Free
IRFL4310PBF产品属性
- 类型
描述
- 型号
IRFL4310PBF
- 功能描述
MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
SOT-223 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
原厂封装 |
2720 |
原装现货假一罚十 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
25+ |
SOT-223 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
12+ |
SOT-223 |
2500 |
原装现货/特价 |
|||
International Rectifier |
2022+ |
693 |
全新原装 货期两周 |
||||
Infineon Technologies |
21+ |
- |
2500 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
IR |
24+ |
65230 |
|||||
IR |
23+ |
TO-252 |
3025 |
原装正品代理渠道价格优势 |
IRFL4310PBF 价格
参考价格:¥1.3753
IRFL4310PBF 资料下载更多...
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