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IRFL4310TRPBF中文资料
IRFL4310TRPBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
● Surface Mount
● Dynamic dv/dt Rating
● Fast Switching
● Ease of Paralleling
● Advanced Process Technology
● Ultra Low On-Resistance
● Lead-Free
IRFL4310TRPBF产品属性
- 类型
描述
- 型号
IRFL4310TRPBF
- 功能描述
MOSFET MOSFT 100V 1.6A 200mOhm 17nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
25+ |
SOT-223 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
2020+ |
SOT-223 |
22000 |
全新原装正品 现货库存 价格优势 |
|||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
IR |
24+ |
SOT-223 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
INFINEON/英飞凌 |
25+ |
SOT-223 |
35668 |
INFINEON/英飞凌全新特价IRFL4310TRPBF即刻询购立享优惠#长期有货 |
|||
IR |
16+ |
SOT-223 |
36000 |
原装正品,优势库存81 |
|||
INFINEON/英飞凌 |
2019+ |
SOT223 |
78550 |
原厂渠道 可含税出货 |
|||
INFINEON/英飞凌 |
24+ |
SOT-223 |
2500 |
只做原厂渠道 可追溯货源 |
|||
IR |
17+ |
SOT-223 |
40000 |
只做原装,公司现货,提供一站式BOM配单服务! |
|||
INFINEON/英飞凌 |
20+ |
SOT-223 |
120000 |
原装正品 可含税交易 |
IRFL4310TRPBF 价格
参考价格:¥1.2586
IRFL4310TRPBF 资料下载更多...
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