Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)

VDSS = 55V RDS(on) = 0.075Ω ID = 2.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

HEXFET® Power MOSFET

VDSS = 55V\nRDS(on) = 0.075Ω\nID = 2.8ADescription\nFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package

\n优势:\n• RoHS Compliant\n• Low RDS(on)\n• Industry-leading quality\n• Dynamic dv/dt Rating\n• Fast Switching\n• Fully Avalanche Rated\n• 175°C Operating Temperature;

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)

VDSS = 55V RDS(on) = 0.075Ω ID = 2.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and impro

HEXFET Power MOSFET

VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction op

采用 SOT-223 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

HEXFET Power MOSFET

VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction op

Advanced Process Technology

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Advanced Process Technology

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Surface Mount

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Advanced Process Technology

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Advanced Process Technology

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1.4cm (0.55-inch) NTSC/PAL Color LCD Panel

Description The LCX024AKB is a 1.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation in NTSC/PAL mode. RGB dots are arranged in a delta pattern featuring h

Error Amplifier ICs

Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi

N-CHANNEL POWER MOSFET

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Silicon planar type

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