HEXFET Power MOSFET

VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction op

采用 SOT-223 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

HEXFET Power MOSFET

VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction op

Advanced Process Technology

文件：269.75 Kbytes Page：10 Pages

Advanced Process Technology

文件：269.75 Kbytes Page：10 Pages

Advanced Process Technology

文件：269.75 Kbytes Page：10 Pages

1.4cm (0.55-inch) NTSC/PAL Color LCD Panel

Description The LCX024AKB is a 1.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation in NTSC/PAL mode. RGB dots are arranged in a delta pattern featuring h

Error Amplifier ICs

Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi

N-CHANNEL POWER MOSFET

文件：23.14 Kbytes Page：2 Pages

Silicon planar type

文件：49.05 Kbytes Page：4 Pages