Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Fast Switching • E

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)

Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

HEXFET Power MOSFET

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

Advanced Process Technology

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

Surface Mount, Fast Switching

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Fast Switching • Eas

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：296.72 Kbytes Page：9 Pages

55V 单个 N 通道 HEXFET Power MOSFET, 采用 SOT-223 封装

Advanced Process Technology

文件：164.33 Kbytes Page：8 Pages

Advanced Process Technology

文件：164.33 Kbytes Page：8 Pages

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：296.72 Kbytes Page：9 Pages

Power MOSFET

文件：296.72 Kbytes Page：9 Pages

STATIC SEALS

DESCRIPTION The BECA 014 profile is a polyurethane static seal. It provides an alternative solution to combining an O'Ring (possible twisting during fitting) with a back-up ring (positioning is not always optimal). APPLICATIONS Mobile hydraulics Injection presses Presses Standard cy

3-Cup Anemometer

Benefits and Features Ideal for applications that do not require wind direction measurements Sealed magnetic reed switch Designed for continuous, long term, unattended operation in adverse conditions Standard aluminum cup assembly has a distance constant of less than 4.5 m For greater se

Field replaceable bearings and electronics

文件：899.27 Kbytes Page：1 Pages

Aluminum or Lexan cups available

文件：374.14 Kbytes Page：2 Pages

EFD20 HIGH FREQUENCY PoE TRANSFORMER

文件：280.38 Kbytes Page：1 Pages