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IRFL014价格
参考价格：￥0.7740
型号：IRFL014NPBF 品牌：INTERNATIONAL 备注：这里有IRFL014多少钱，2024年最近7天走势，今日出价，今日竞价，IRFL014批发/采购报价，IRFL014行情走势销售排行榜，IRFL014报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFL014 | PowerMOSFET(Vdss=60V,Rds(on)=0.20ohm,Id=2.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount •AvailableinTape&Reel •DynamicdV/dtRating •FastSwitching •E | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFL014 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 |  | |
IRFL014 | PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRFL014 | PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET(Vdss=55V,Rds(on)=0.16ohm,Id=1.9A) Description FifthGenerationHEXFET®MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFET®MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-ChannelEnhancementModePowerMOSFET GENERALFEATURES 60V,4A,Rps(on)=85mQ@Vgs=10V. Rpsion)=100mQ@Vgs=4.5V. HighdensecelldesignforextremelylowRps(on)- Ruggedandreliable. Leadfreeproductisacquired. SOT-223package. | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 |  | | |
AdvancedProcessTechnology Description FifthGenerationHEXFET®MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SurfaceMount,FastSwitching DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount •AvailableinTape&Reel •DynamicdV/dtRating •FastSwitching •Eas | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：296.72 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
AdvancedProcessTechnology 文件：164.33 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
AdvancedProcessTechnology 文件：164.33 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：296.72 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：296.72 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Fieldreplaceablebearingsandelectronics 文件：899.27 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
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PolySwitchResettableDevices 文件：289.55 Kbytes Page：26 Pages | MACOM Tyco Electronics |  | |
IRFL014产品属性
- 类型
描述
- 型号
IRFL014
- 功能描述
MOSFET N-Chan 60V 2.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
SOT223 |
7906200 |
|||||
VISHAY(威世) |
23+ |
SOT-223-3 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
|||
Vishay |
2020+ |
SOT-223 |
54370 |
公司代理品牌,原装现货超低价清仓! |
|||
IR |
17PB |
SOT-223 |
195 |
普通 |
|||
IOR |
21+ |
SOT223 |
10000 |
原装现货假一罚十 |
|||
IR |
22+ |
原厂封装 |
15850 |
原装正品，实单请联系 |
|||
IRF |
22+ |
SOT-223 |
2560 |
绝对原装!现货热卖! |
|||
INFINEON |
22+ |
SOT223 |
10000 |
原装现正品可看现货 |
|||
IR |
21+ |
SOT-223 |
10000 |
原厂订货价格优势,可开13%的增值税票 |
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2019-3-7
DdatasheetPDF页码索引
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