Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Fast Switching • E

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating;

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

55V 单个 N 通道 HEXFET Power MOSFET, 采用 SOT-223 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

HEXFET Power MOSFET

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

Advanced Process Technology

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

丝印代码：FL014N；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Surface Mount, Fast Switching

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Fast Switching • Eas

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：296.72 Kbytes Page：9 Pages

Advanced Process Technology

文件：164.33 Kbytes Page：8 Pages

Advanced Process Technology

文件：164.33 Kbytes Page：8 Pages

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：1.0036 Mbytes Page：9 Pages

Power MOSFET

文件：296.72 Kbytes Page：9 Pages

Power MOSFET

文件：296.72 Kbytes Page：9 Pages

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY

DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified

MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY

DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVV014A is designed for Television Band III Applications up to 225 MHz. FEATURES: • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold™ Metalization System • Emitter Ballasting

Adaptive Cable Equalizer for High-Speed Data Recovery

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