Surface Mount, Fast Switching

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Fast Switching • Eas

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

Power MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY

DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified

MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY

DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVV014A is designed for Television Band III Applications up to 225 MHz. FEATURES: • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold™ Metalization System • Emitter Ballasting

Adaptive Cable Equalizer for High-Speed Data Recovery

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