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IRFIBC30G价格
参考价格：￥9.3553
型号：IRFIBC30GPBF 品牌：Vishay 备注：这里有IRFIBC30G多少钱，2025年最近7天走势，今日出价，今日竞价，IRFIBC30G批发/采购报价，IRFIBC30G行情走势销售排行榜，IRFIBC30G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIBC30G | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applicat | IRF |   | |
IRFIBC30G | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz) • Sink | VishayVishay Siliconix 威世威世科技公司 | | |
IRFIBC30G | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFIBC30G | Power MOSFET 文件：278.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFIBC30G | Power MOSFET 文件：929.66 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFIBC30G | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFIBC30G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A | Infineon 英飞凌 | | |
HEXFET Power MOSFET Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applicat | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz) • Sink | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：278.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：278.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
MOSFET N-CH600V HEXFET MOSFET | VishayVishay Siliconix 威世威世科技公司 | |
IRFIBC30G产品属性
- 类型
描述
- 型号
IRFIBC30G
- 功能描述
MOSFET N-Chan 600V 2.5 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
TO2203 Isolated Tab |
9000 |
原厂渠道,现货配单 |
|||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
24+ |
TO220 |
40618 |
||||
IR |
1923+ |
TO220 |
8900 |
公司库存原装低价格欢迎实单议价 |
|||
IR |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
IR |
25+ |
TO-220 |
15000 |
全新原装现货,假一赔十. |
|||
VISHAY |
24+/25+ |
TO-220FP |
3800 |
原装正品现货库存价优 |
|||
IR |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
INFINEON/英飞凌 |
2450+ |
TO220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
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IRFIBC30G规格书下载地址
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DdatasheetPDF页码索引
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