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IRFIBC30G价格
参考价格：￥9.3553
型号：IRFIBC30GPBF 品牌：Vishay 备注：这里有IRFIBC30G多少钱，2024年最近7天走势，今日出价，今日竞价，IRFIBC30G批发/采购报价，IRFIBC30G行情走势销售排行榜，IRFIBC30G报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIBC30G | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFIBC30G | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •Sink | VishayVishay Siliconix 威世科技 |  | |
IRFIBC30G | iscN-Channel MOSFET Transistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=2.2Ω(MAX) •Enhancementmode:Vth=2to4V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFIBC30G | Power MOSFET 文件：278.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | |
IRFIBC30G | Power MOSFET 文件：929.66 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
HEXFET Power MOSFET Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •Sink | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：278.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：278.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | |
IRFIBC30G产品属性
- 类型
描述
- 型号
IRFIBC30G
- 功能描述
MOSFET N-Chan 600V 2.5 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-220F |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
IR |
24+ |
TO 220F |
161280 |
明嘉莱只做原装正品现货 |
|||
IR |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
IR/INFINEON |
22+21+ |
TO-220F |
2200 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
IR |
22+ |
TO-220F |
5000 |
绝对全新原装现货 |
|||
IR |
23+ |
TO-220 |
2860 |
全新原装热卖/假一罚十!更多数量可订货 |
|||
Vishay Siliconix |
21+ |
TO2203 Isolated Tab |
13880 |
公司只售原装,支持实单 |
|||
IR |
23+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
2023+ |
TO220 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
magnachip |
2023+ |
TO-220F |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
IRFIBC30G芯片相关品牌
IRFIBC30G规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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