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IRFIBC30价格
参考价格：￥9.3553
型号：IRFIBC30GPBF 品牌：Vishay 备注：这里有IRFIBC30多少钱，2025年最近7天走势，今日出价，今日竞价，IRFIBC30批发/采购报价，IRFIBC30行情走势销售排行榜，IRFIBC30报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applicat | IRF |   | |
IRFIBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) | Infineon 英飞凌 | | |
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applicat | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz) • Sink | VishayVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
HEXFET Power MOSFET Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applicat | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz) • Sink | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：278.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：929.66 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：278.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：278.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRFIBC30产品属性
- 类型
描述
- 型号
IRFIBC30
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
1850 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY/威世 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TO 220F |
161280 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
24+ |
TO-220 F |
27500 |
原装正品,价格最低! |
|||
IR |
24+ |
TO-220F |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
TO-220F |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR |
NEW |
TO-220F |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
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DdatasheetPDF页码索引
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