Power MOSFET

FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Reqirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-fr

SMPS MOSFET, HEXFET Power MOSFET

Features and Benefits ● Super Fast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate charge results in simpler drive requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate Voltage Threshold Offers Improved Noise Immunity Applicatio

Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)

VDSS 500V Rds(on) max 0.52Ω ID 6.6A Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch

HEXFET Power MOSFET

Features and Benefits ● Super Fast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate charge results in simpler drive requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate Voltage Threshold Offers Improved Noise Immunity Applicatio

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

500V N-Channel MOSFET

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500V N-Channel MOSFET

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