Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)

VDSS 500V Rds(on) max 0.52Ω ID 6.6A Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch

Uninterruptible Power Supply

文件：163.61 Kbytes Page：8 Pages

iscN-Channel MOSFET Transistor

文件：318.86 Kbytes Page：2 Pages

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

Power MOSFET

文件：198.36 Kbytes Page：10 Pages

Power MOSFET

HEXFET® Power MOSFET

SMPS MOSFET

VDSS 500V Rds(on) max 0.52Ω ID 6.6A Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch

Power MOSFET

文件：198.36 Kbytes Page：10 Pages

MOSFET N-CH500V HEXFET MOSFET

Power MOSFET

文件：198.36 Kbytes Page：10 Pages

HEXFET Power MOSFET

Features and Benefits ● Super Fast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate charge results in simpler drive requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate Voltage Threshold Offers Improved Noise Immunity Applicatio

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

500V N-Channel MOSFET

文件：408.17 Kbytes Page：10 Pages

500V N-Channel MOSFET

文件：958.82 Kbytes Page：10 Pages