isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

500V N-Channel MOSFET

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500V N-Channel MOSFET

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功率 MOSFET，N 沟道，UniFETTM，500 V，7 A，900 mΩ，TO-220

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

500V N-Channel MOSFET

文件：458.93 Kbytes Page：10 Pages

N-Channel MOSFET, FRFET 500V, 6A, 1.15OHM

文件：549.31 Kbytes Page：9 Pages

500V N-Channel MOSFET

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7 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

Fast Switching Speed

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7A, 500V N-CHANNEL POWER MOSFET

文件：180.11 Kbytes Page：6 Pages