Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)

Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS† Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characteri

Vishay Siliconix

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS)

HEXFET Power MOSFET

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

iscN-Channel MOSFET Transistor

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HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A

Power MOSFET

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Power MOSFET

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6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

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N-Channel 600V (D-S) Power MOSFET

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