N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 1.0 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 A

6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. Features • 6.2A and 5.4A, 600V • rDS(ON) = 1.2Ω and 1.6Ω • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines f

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

CURRENT-MODE-PWM CONTROLLER

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Power MOSFET

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6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET

Power MOSFET

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

HEXFET Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ●Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS )

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

HEXFET-R POWER MOSFET

HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)

Power MOSFET

Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements

Power MOSFET

Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements

HEXFET짰 Power MOSFET

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

HEXFET POWER MOSFET (VDSS=600V , RDS(on)=1.2Ohm , ID=6.2A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling •

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

HEXFET짰 Power MOSFET

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

Power MOSFET

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