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IRFBC40价格
参考价格：￥17.1725
型号：IRFBC40 品牌：Vishay 备注：这里有IRFBC40多少钱，2024年最近7天走势，今日出价，今日竞价，IRFBC40批发/采购报价，IRFBC40行情走势销售排行榜，IRFBC40报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC40 | N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=1.0Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100A | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
IRFBC40 | 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
IRFBC40 | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSu | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFBC40 | 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors. Features •6.2Aand5.4A,600V •rDS(ON)=1.2Ωand1.6Ω •RepetitiveAvalancheEnergyRated •SimpleDriveRequirements •EaseofParalleling •RelatedLiterature -TB334,“Guidelinesf | HARRIS HARRIS corporation |  | |
IRFBC40 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFBC40 | CURRENT-MODE-PWM CONTROLLER 文件：301.07 Kbytes Page：20 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) |  | |
IRFBC40 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
IRFBC40 | Power MOSFET 文件：641.86 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 |  | |
IRFBC40 | Power MOSFET 文件：590.8 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
IRFBC40 | iscN-Channel MOSFET Transistor 文件：328.21 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSu | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSu | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
HEXFET-R POWER MOSFET HEXFETPowerMOSFET(Vdss=600V/Rds(on)=1.2ohm/Id=6.2A) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalPowerMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirements | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalPowerMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirements | VishayVishay Siliconix 威世科技 | | | |
HEXFET짰 Power MOSFET Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HEXFET POWER MOSFET (VDSS=600V , RDS(on)=1.2Ohm , ID=6.2A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofParalleling • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
HEXFET짰 Power MOSFET Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：641.86 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：151.08 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-Channel MOSFET Transistor 文件：328.74 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOSFET 文件：284.71 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：284.71 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：284.71 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-Channel MOSFET Transistor 文件：322.25 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HEXFET POWER MOSFET 文件：594.06 Kbytes Page：9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-Channel MOSFET Transistor 文件：366.87 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOSFET 文件：328.07 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：285.8 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：285.8 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：285.8 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：328.07 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：641.86 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：590.8 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：641.86 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
isc N-Channel MOSFET Transistor 文件：67.01 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-Channel MOSFET Transistor 文件：322.23 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOSFET 文件：328.07 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：328.07 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
IRFBC40产品属性
- 类型
描述
- 型号
IRFBC40
- 功能描述
MOSFET N-Chan 600V 6.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VIS |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
VISHAY |
23+ |
TO-263-3 (D2PAK) |
300 |
原装现货支持送检 |
|||
IR墨西哥 |
22+ |
TO-220 |
69 |
长源创新-只做原装---假一赔十 |
|||
IR |
23+ |
PLCC44 |
18000 |
||||
VISHAY |
2020+ |
TO-220 |
700 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY(威世) |
23+ |
TO-263-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY/威世 |
21+ |
TO-220 |
60000 |
原装正品进口现货 |
|||
IR/FSC |
1738+ |
TO-220 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
IR |
16+ |
原厂封装 |
12500 |
原装现货假一罚十 |
|||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
IRFBC40芯片相关品牌
IRFBC40规格书下载地址
IRFBC40参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
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- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFD112
- IRFD110
- IRFD024
- IRFD022
- IRFD020
- IRFD014
- IRFD012
- IRFD010
- IRFC450
- IRFC350
- IRFC250
- IRFC240
- IRFC150
- IRFBG30PBF
- IRFBG30
- IRFBG20PBF
- IRFBG20
- IRFBF30PBF
- IRFBF30
- IRFBF20STRRPBF
- IRFBF20STRLPBF
- IRFBF20SPBF
- IRFBF20PBF
- IRFBF20LPBF
- IRFBF20
- IRFBE30STRLPBF
- IRFBE30SPBF
- IRFBE30PBF
- IRFBE30LPBF
- IRFBE30
- IRFBE20PBF
- IRFBE20
- IRFBC42
- IRFBC40STRLPBF
- IRFBC40PBF
- IRFBC40LCPBF
- IRFBC40ASTRLPBF
- IRFBC40ASPBF
- IRFBC40APBF
- IRFBC30STRLPBF
- IRFBC30SPBF
- IRFBC30PBF
- IRFBC30ASPBF
- IRFBC30APBF
- IRFBC30ALPBF
- IRFBC30A
- IRFBC30
- IRFBC20SPBF
- IRFBC20PBF
- IRFBC20
- IRFBA90N20DPBF
- IRFBA1405PPBF
- IRFBA1404PPBF
- IRFB9N65APBF
- IRFB9N60APBF
- IRFB812PBF
- IRFB812
- IRFB7787PBF
- IRFB7746PBF
- IRFB7740PBF
- IRFB260
- IRFAG50
- IRFAG40
- IRFAG30
- IRFAF50
- IRFAF40
- IRFAF30
- IRFAE50
- IRFAE40
- IRFAE30
- IRFAC42
- IRFAC40
- IRFAC30
- IRF9Z34
- IRF9Z32
- IRF9Z30
- IRF9Z24
IRFBC40数据表相关新闻
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2020-4-18IRFF433，IRFP462，IRFP9140，IRFP9140S2424，IRFP9141，IRFP9143，IRFP9241，IRFP9242，IRFPC40，IRFPC42，IRFPG42，IRFF9222，IRFF9122，IRFF9123，IRFF9130
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2019-12-17IRFH5220TRPBF公司大量全新原装现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-5
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