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IRFBC40A价格
参考价格：￥3.9709
型号：IRFBC40APBF 品牌：VISHAY 备注：这里有IRFBC40A多少钱，2025年最近7天走势，今日出价，今日竞价，IRFBC40A批发/采购报价，IRFBC40A行情走势销售排行榜，IRFBC40A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC40A | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su | IRF |   | |
IRFBC40A | Power MOSFET 文件：151.08 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
IRFBC40A | iscN-Channel MOSFET Transistor 文件：328.74 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFBC40A | Power MOSFET 文件：284.71 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRFBC40A | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFBC40A | HEXFET Power MOSFET | Infineon 英飞凌 | | |
HEXFET Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ●Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS ) | IRF | | ||
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su | IRF | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：284.71 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：284.71 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
iscN-Channel MOSFET Transistor 文件：322.25 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | | ||
HEXFET POWER MOSFET 文件：594.06 Kbytes Page：9 Pages | IRF | | ||
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | |
IRFBC40A产品属性
- 类型
描述
- 型号
IRFBC40A
- 功能描述
MOSFET N-Chan 600V 6.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
10155 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
65428 |
百分百原装现货 实单必成 |
|||
VISHAY/威世 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
IR |
24+ |
TO 220 |
161193 |
明嘉莱只做原装正品现货 |
|||
IR |
00+ |
TO-220 |
2700 |
||||
IR |
24+ |
TO-263 |
501343 |
免费送样原盒原包现货一手渠道联系 |
|||
SILICONIXVISHAY |
21+ |
NA |
5000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
23+ |
TO-220 |
20000 |
专做原装正品,假一罚百! |
|||
IR |
25+23+ |
TO-263 |
27727 |
绝对原装正品全新进口深圳现货 |
IRFBC40A芯片相关品牌
IRFBC40A规格书下载地址
IRFBC40A参数引脚图相关
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DdatasheetPDF页码索引
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