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IRFBC40A价格

参考价格:¥3.9709

型号:IRFBC40APBF 品牌:VISHAY 备注:这里有IRFBC40A多少钱,2026年最近7天走势,今日出价,今日竞价,IRFBC40A批发/采购报价,IRFBC40A行情走势销售排行榜,IRFBC40A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFBC40A

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

IRF

IRFBC40A

Power MOSFET

文件:284.71 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40A

Power MOSFET

文件:151.08 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40A

iscN-Channel MOSFET Transistor

文件:328.74 Kbytes Page:2 Pages

ISC

无锡固电

IRFBC40A

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40A

HEXFET Power MOSFET

INFINEON

英飞凌

HEXFET Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ●Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS )

IRF

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

IRF

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:284.71 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:284.71 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印代码:D2PAK;iscN-Channel MOSFET Transistor

文件:322.25 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:387.52 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

文件:594.06 Kbytes Page:9 Pages

IRF

Power MOSFET

文件:387.52 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:387.52 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40A产品属性

  • 类型

    描述

  • 型号

    IRFBC40A

  • 功能描述

    MOSFET N-Chan 600V 6.2 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-19 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
原厂封装
1856
原装现货假一罚十
IR
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
VISHAY/威世
25+
TO-220
32360
VISHAY/威世全新特价IRFBC40APBF即刻询购立享优惠#长期有货
INFINEON/英飞凌
2026+
TO-220
65428
百分百原装现货 实单必成
IOR
25+
SOIC
37500
原装正品现货,价格有优势!
VISHAY
12+
TO-220
18
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
24+
TO 220
161193
明嘉莱只做原装正品现货
VISHAY/威世
20+23+
TO-220
1513
正规报关原装现货系列订货技术支持
Vishay Siliconix
22+
TO2203
9000
原厂渠道,现货配单
IR
2015+
TO-220
19889
一级代理原装现货,特价热卖!

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