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IRFBC40A价格
参考价格：￥3.9709
型号：IRFBC40APBF 品牌：VISHAY 备注：这里有IRFBC40A多少钱，2026年最近7天走势，今日出价，今日竞价，IRFBC40A批发/采购报价，IRFBC40A行情走势销售排行榜，IRFBC40A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC40A | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su | IRF |   | |
IRFBC40A | Power MOSFET • Low gate charge Qg results in simple drive Requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current\n\n\nAPPLICATIONS• Switch mode power supply (SMPS)\n• Uninterruptible power supply\n• High speed power switching; | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBC40A | HEXFET Power MOSFET | INFINEON 英飞凌 | | |
IRFBC40A | iscN-Channel MOSFET Transistor 文件：328.74 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFBC40A | Power MOSFET 文件：151.08 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBC40A | Power MOSFET 文件：284.71 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
HEXFET Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ●Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS ) | IRF | | ||
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su | IRF | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET Low gate charge Qg results in simple drive requirement\nImproved gate, avalanche and dynamic dV/dt ruggedness\nFully characterized capacitance and avalanche voltage and current; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：284.71 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：284.71 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：D2PAK；iscN-Channel MOSFET Transistor 文件：322.25 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET POWER MOSFET 文件：594.06 Kbytes Page：9 Pages | IRF | | ||
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
IRFBC40A产品属性
- 类型
描述
- 型号
IRFBC40A
- 功能描述
MOSFET N-Chan 600V 6.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY/威世 |
25+ |
TO-220 |
32360 |
VISHAY/威世全新特价IRFBC40APBF即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
20+23+ |
TO-220 |
1513 |
正规报关原装现货系列订货技术支持 |
|||
IR |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
INFINEON/英飞凌 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
NA |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
SOT-263 |
6026 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
IR |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
INFINEON/英飞凌 |
00+00+ |
TO-220 |
246 |
原装进口无铅现货 |
IRFBC40A规格书下载地址
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DdatasheetPDF页码索引
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