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IRFBC40AS价格
参考价格：￥4.8122
型号：IRFBC40ASPBF 品牌：Vishay 备注：这里有IRFBC40AS多少钱，2026年最近7天走势，今日出价，今日竞价，IRFBC40AS批发/采购报价，IRFBC40AS行情走势销售排行榜，IRFBC40AS报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC40AS | Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFBC40AS | Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBC40AS | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su | IRF | | |
IRFBC40AS | Power MOSFET Low gate charge Qg results in simple drive requirement\nImproved gate, avalanche and dynamic dV/dt ruggedness\nFully characterized capacitance and avalanche voltage and current; | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFBC40AS | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) | INFINEON 英飞凌 | | |
IRFBC40AS | 丝印代码：D2PAK；iscN-Channel MOSFET Transistor 文件：322.25 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Power MOSFET Low gate charge Qg results in simple drive requirement\n Improved gate, avalanche and dynamic dV/dt ruggedness\n Fully characterized capacitance and avalanche voltage and current\n\n ; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance ple | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET POWER MOSFET 文件：594.06 Kbytes Page：9 Pages | IRF | | ||
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：387.52 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
IRFBC40AS产品属性
- 类型
描述
- 型号
IRFBC40AS
- 功能描述
MOSFET N-Chan 600V 6.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
26+ |
TO-263 |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
24+ |
NA |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
SOT-263 |
6026 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
HAMOS/汉姆 |
23+ |
TO-263 |
30000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
23+ |
TO-263 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
|||
VISHAY |
20+ |
1600 |
TO-263-3 (D2PAK) |
IRFBC40AS规格书下载地址
IRFBC40AS参数引脚图相关
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- jumper
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- isd1420
- IRFD112
- IRFD110
- IRFD024
- IRFD022
- IRFD020
- IRFD014
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- IRFD010PBF
- IRFD010
- IRFC450
- IRFC350
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- IRFC240
- IRFC150
- IRFBG30PBF
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- IRFBF30PBF
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- IRFB260
- IRFAG50
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- IRFAG30
- IRFAF50
- IRFAF40
- IRFAF30
- IRFAE50
- IRFAE40
- IRFAE30
- IRFAC42
- IRFAC40
- IRFAC30
- IRF9Z34
- IRF9Z32
- IRF9Z30
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2019-5-5
DdatasheetPDF页码索引
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