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IRFBC40AS价格

参考价格:¥4.8122

型号:IRFBC40ASPBF 品牌:Vishay 备注:这里有IRFBC40AS多少钱,2026年最近7天走势,今日出价,今日竞价,IRFBC40AS批发/采购报价,IRFBC40AS行情走势销售排行榜,IRFBC40AS报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFBC40AS

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

IRF

IRFBC40AS

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40AS

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40AS

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40AS

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

INFINEON

英飞凌

IRFBC40AS

丝印代码:D2PAK;iscN-Channel MOSFET Transistor

文件:322.25 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

文件:594.06 Kbytes Page:9 Pages

IRF

Power MOSFET

文件:387.52 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:387.52 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:387.52 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40AS产品属性

  • 类型

    描述

  • 型号

    IRFBC40AS

  • 功能描述

    MOSFET N-Chan 600V 6.2 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-18 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
550
TO-263
2726
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
IR
2025+
TO-263
4675
全新原厂原装产品、公司现货销售
HAMOS/汉姆
23+
TO-263
30000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ir
24+
N/A
6980
原装现货,可开13%税票
Vishay(威世)
23+
N/A
11800
IOR
25+
D2PAK
2987
绝对全新原装现货供应!
IR
SOT-263
6026
一级代理 原装正品假一罚十价格优势长期供货
VISHAY/威世
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!

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