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IRFBC40L价格

参考价格:¥5.8356

型号:IRFBC40LCPBF 品牌:Vishay 备注:这里有IRFBC40L多少钱,2026年最近7天走势,今日出价,今日竞价,IRFBC40L批发/采购报价,IRFBC40L行情走势销售排行榜,IRFBC40L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFBC40L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40L

Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

IRF

IRFBC40L

Power MOSFET

Surface-mount (IRFBC40S, SiHFBC40S)\nLow-profile through-hole (IRFBC40L, SiHFBC40L)\nAvailable in tape and reel (IRFBC40S, SiHFBC40S);

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40L

Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)

INFINEON

英飞凌

IRFBC40L

丝印代码:I2PAK;iscN-Channel MOSFET Transistor

文件:366.87 Kbytes Page:2 Pages

ISC

无锡固电

IRFBC40L

Power MOSFET

文件:328.07 Kbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements

VISHAYVishay Siliconix

威世威世科技公司

HEXFET-R POWER MOSFET

HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)

IRF

Power MOSFET

• Ultra low gate charge\n• Reduced gate drive requirement\n• Enhanced 30 V, VGS rating;

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

IRF

Power MOSFET

文件:285.8 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:285.8 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:285.8 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:328.07 Kbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBC40L产品属性

  • 类型

    描述

  • 型号

    IRFBC40L

  • 功能描述

    MOSFET N-Chan 600V 6.2 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-2 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+23+
TO-262
27724
绝对原装正品全新进口深圳现货
IR
22+
TO-263
8000
原装正品支持实单
VishayIR
24+
TO-263
82
IR/进口原
17+
TO-220
6200
VISHAY
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
IR
23+
TO-220AB
5000
原装正品,假一罚十
VISHAY/威世
26+
TO-220
8635
一级代理优势现货,全新正品直营店
Vishay(威世)
25+
TO-220AB
500000
源自原厂成本,高价回收工厂呆滞
IR
最新
TO-262
6896
原装进口现货库存专业工厂研究所配单供货
IR
20+
TO-220
38560
原装优势主营型号-可开原型号增税票

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