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IRFBC40L价格
参考价格：￥5.8356
型号：IRFBC40LCPBF 品牌：Vishay 备注：这里有IRFBC40L多少钱，2025年最近7天走势，今日出价，今日竞价，IRFBC40L批发/采购报价，IRFBC40L行情走势销售排行榜，IRFBC40L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC40L | Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. | IRF |   | |
IRFBC40L | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi | VishayVishay Siliconix 威世科技 | | |
IRFBC40L | iscN-Channel MOSFET Transistor 文件：366.87 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFBC40L | Power MOSFET 文件：328.07 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
IRFBC40L | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRFBC40L | Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) | Infineon 英飞凌 | | |
HEXFET-R POWER MOSFET HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A) | IRF | | ||
Power MOSFET Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements | VishayVishay Siliconix 威世科技 | | ||
HEXFET짰 Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：285.8 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：285.8 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：285.8 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：328.07 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | |
IRFBC40L产品属性
- 类型
描述
- 型号
IRFBC40L
- 功能描述
MOSFET N-Chan 600V 6.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 220 |
161111 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
TO-262 |
501154 |
免费送样原盒原包现货一手渠道联系 |
|||
TO-220 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
IR |
25+23+ |
TO-220 |
27722 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
TO-262 |
710 |
||||
IR |
25+ |
PLCC44 |
18000 |
原厂直接发货进口原装 |
|||
VISHAY(威世) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR/进口原 |
17+ |
TO-220 |
6200 |
||||
IR |
23+ |
TO-220AB |
5000 |
原装正品,假一罚十 |
|||
Vishay Siliconix |
23+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原装正品，支持实单 |
IRFBC40L芯片相关品牌
IRFBC40L规格书下载地址
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DdatasheetPDF页码索引
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