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IRFBC30价格
参考价格：￥21.3201
型号：IRFBC30 品牌：Vishay 备注：这里有IRFBC30多少钱，2025年最近7天走势，今日出价，今日竞价，IRFBC30批发/采购报价，IRFBC30行情走势销售排行榜，IRFBC30报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC30 | iscN-Channel MOSFET Transistor DESCRIPTION • High current, high speed switching • Switch mode power supplies • DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. FEATURES • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technolog | ISC 无锡固电 |   | |
IRFBC30 | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET DESCRIPTION The PowerMESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = | STMICROELECTRONICS 意法半导体 | | |
IRFBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
| IRF | | |
IRFBC30 | Power MOSFET 文件：780.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBC30 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
IRFBC30 | Power MOSFET 文件：943.73 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBC30 | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET | STMICROELECTRONICS 意法半导体 | | |
IRFBC30 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) | Infineon 英飞凌 | | |
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt | IRF | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰 Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt | IRF | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt | IRF | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt | IRF | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC30S, SiHFBC30S) • Low-profile through-hole (IRFBC30L, SiHFBC30L) • Available in tape and reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of c | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It | IRF | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC30S, SiHFBC30S) • Low-profile through-hole (IRFBC30L, SiHFBC30L) • Available in tape and reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of c | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Surface-mount (IRFBC30S, SiHFBC30S) • Low-profile through-hole (IRFBC30L, SiHFBC30L) • Available in tape and reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of c | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：943.73 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：155.85 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
iscN-Channel MOSFET Transistor 文件：328.78 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：179.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：179.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：155.85 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：179.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：179.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：780.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET 文件：1.22876 Mbytes Page：8 Pages | IRF | | ||
N-Channel 650 V (D-S) MOSFET 文件：2.0425 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：943.73 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：943.73 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRFBC30产品属性
- 类型
描述
- 型号
IRFBC30
- 功能描述
MOSFET N-Chan 600V 3.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
15000 |
原装正品现货 |
|||
VISHAY(威世) |
23+ |
N/A |
23500 |
最新到货,只做原装进口 |
|||
IR |
24+ |
TO 220 |
161134 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
20+ |
TO-220 |
50000 |
||||
IR/VISHAY |
25+ |
TO-220 |
45000 |
IR/VISHAY全新现货IRFBC30PBF即刻询购立享优惠#长期有排单订 |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
21+ |
TO-220 |
30000 |
全新原装公司现货
|
|||
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
21+ |
TO-220 |
6880 |
只做原装,质量保证 |
|||
VISHAY |
23+ |
TO-220 |
65400 |
IRFBC30芯片相关品牌
IRFBC30规格书下载地址
IRFBC30参数引脚图相关
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- IRFB260
- IRFAG50
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- IRFAG30
- IRFAF50
- IRFAF40
- IRFAF30
- IRFAE50
- IRFAE40
- IRFAE30
- IRFAC42
- IRFAC40
- IRFAC30
- IRF9Z34
- IRF9Z32
- IRF9Z30
- IRF9Z24
- IRF9Z22
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DdatasheetPDF页码索引
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