IRFBC30A价格

参考价格:¥21.1746

型号:IRFBC30A 品牌:Vishay 备注:这里有IRFBC30A多少钱,2025年最近7天走势,今日出价,今日竞价,IRFBC30A批发/采购报价,IRFBC30A行情走势销售排行榜,IRFBC30A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFBC30A

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

IRF

IRFBC30A

Power MOSFET

文件:155.85 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFBC30A

iscN-Channel MOSFET Transistor

文件:328.78 Kbytes Page:2 Pages

ISC

无锡固电

IRFBC30A

Power MOSFET

文件:179.3 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRFBC30A

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFBC30A

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Infineon

英飞凌

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VishayVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VishayVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

IRF

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

IRF

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VishayVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VishayVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VishayVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:179.3 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:155.85 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:179.3 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

MOSFET N-CH600V HEXFET MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:179.3 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VishayVishay Siliconix

威世威世科技公司

IRFBC30A产品属性

  • 类型

    描述

  • 型号

    IRFBC30A

  • 功能描述

    MOSFET N-Chan 600V 3.6 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-4 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VISHAY/威世
25+
TO-220
32360
VISHAY/威世全新特价IRFBC30APBF即刻询购立享优惠#长期有货
IR
NEW
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
24+
TO 220
161067
明嘉莱只做原装正品现货
IR
00+
TO-262
2790
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世
2450+
TO-262
9850
只做原装正品现货或订货假一赔十!
IR
600V3.6A7
8560
一级代理 原装正品假一罚十价格优势长期供货
IR
24+
TO-220AB
8866
VISHAY/威世
2405+
TO-263
4475
原装现货力挺实单
VISHAY(威世)
24+
TO-220
8498
支持大陆交货,美金交易。原装现货库存。

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