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IRFBC30A价格

参考价格:¥21.1746

型号:IRFBC30A 品牌:Vishay 备注:这里有IRFBC30A多少钱,2026年最近7天走势,今日出价,今日竞价,IRFBC30A批发/采购报价,IRFBC30A行情走势销售排行榜,IRFBC30A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFBC30A

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

IRF

IRFBC30A

Power MOSFET

• Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche, and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current;

VISHAYVishay Siliconix

威世威世科技公司

IRFBC30A

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

INFINEON

英飞凌

IRFBC30A

iscN-Channel MOSFET Transistor

文件:328.78 Kbytes Page:2 Pages

ISC

无锡固电

IRFBC30A

Power MOSFET

文件:155.85 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBC30A

Power MOSFET

文件:179.3 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

IRF

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

IRF

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFETs

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:179.3 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

MOSFET N-CH600V HEXFET MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:179.3 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:155.85 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:179.3 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:850.72 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:275.86 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFBC30A产品属性

  • 类型

    描述

  • 型号

    IRFBC30A

  • 功能描述

    MOSFET N-Chan 600V 3.6 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-2 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VIS
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VIS
25+23+
TO-262
27626
绝对原装正品全新进口深圳现货
VISHAY/威世
09+09+
TO-262
2032
原装进口无铅现货
IR
22+
D2-PAK
8000
原装正品支持实单
IR
24+
D2-Pak
8866
IR
26+
SOT-23
86720
全新原装正品价格最实惠 假一赔百
VIS
23+
TO-220AB
10000
原装正品,假一罚十
VISHAY/威世
26+
TO-220
6895
原厂全新正品旗舰店优势现货
VISHAY/威世
24+
TO-220
9600
原装现货,优势供应,支持实单!
VISHAY
最新
TO-262
6896
原装进口现货库存专业工厂研究所配单供货

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