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IRFBC30AS价格
参考价格：￥4.5114
型号：IRFBC30ASPBF 品牌：Vishay 备注：这里有IRFBC30AS多少钱，2025年最近7天走势，今日出价，今日竞价，IRFBC30AS批发/采购报价，IRFBC30AS行情走势销售排行榜，IRFBC30AS报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC30AS | Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFBC30AS | Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt | IRF | | |
IRFBC30AS | Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBC30AS | Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBC30AS | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFBC30AS | SMPS MOSFET | Infineon 英飞凌 | | |
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRFBC30AS产品属性
- 类型
描述
- 型号
IRFBC30AS
- 功能描述
MOSFET N-Chan 600V 3.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
NA |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
2025+ |
TO-263 |
4675 |
全新原厂原装产品、公司现货销售 |
|||
INTERNATIONA |
06+ |
原厂原装 |
5791 |
只做全新原装真实现货供应 |
|||
IR/VISH |
24+ |
65230 |
|||||
IR |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
IR |
22+ |
D2-PAK |
8000 |
原装正品支持实单 |
|||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
|||
IR |
23+ |
TO-263 |
7000 |
||||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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DdatasheetPDF页码索引
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