IRF820A价格

参考价格:¥3.8027

型号:IRF820ALPBF 品牌:Vishay 备注:这里有IRF820A多少钱,2025年最近7天走势,今日出价,今日竞价,IRF820A批发/采购报价,IRF820A行情走势销售排行榜,IRF820A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF820A

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Cu

IRF

IRF820A

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技

IRF820A

N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 2.0Ω ( TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

ISC

无锡固电

IRF820A

Power MOSFET

文件:168.31 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

IRF820A

Power MOSFET

VishayVishay Siliconix

威世科技

IRF820A

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Infineon

英飞凌

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V

IRF

HEXFET Power MOSFET

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技

Power MOSFET

文件:168.31 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

VishayVishay Siliconix

威世科技

Power MOSFET

文件:242.26 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:168.31 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:168.31 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:242.26 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

AITSEMI

创瑞科技

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

AITSEMI

创瑞科技

Screw/plug-in terminal strip Screw/screwless connection

The terminal strip 820 with pitch 10 mm has a dual wire terminal connector on one side. Here, the leads are inserted and clamped all the way to the stop. These terminal strips are designed for solid conductors. The opposite side is equipped with screw connections with rectangular clamping spac

WECO

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

Panel Mount, Shocksafe 5x20mm Fuses

文件:85.15 Kbytes Page:1 Pages

Littelfuse

力特

IRF820A产品属性

  • 类型

    描述

  • 型号

    IRF820A

  • 功能描述

    MOSFET N-Chan 500V 2.5 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
8000
优势代理渠道,原装正品,可全系列订货开增值税票
IR
05+
TO-220
20000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世
23+
TO-220
30000
全新原装现货,价格优势
FAIRCHILD/仙童
24+
TO-220
84000
只做原装进口现货
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
FAIRCHILD
24+
TO-220
27500
原装正品,价格最低!
FAIRCHILD/仙童
23+
TO-220
6710561
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
24+
TO-263
501319
免费送样原盒原包现货一手渠道联系
IR
23+24
TO-220
59630
主营原装MOS,二三级管,肖特基,功率场效应管
VISHAY
25+23+
TO-220
28013
绝对原装正品全新进口深圳现货

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