Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Cu

N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 2.0Ω ( TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

Power MOSFET

• Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current;

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Power MOSFET

文件：168.31 Kbytes Page：9 Pages

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch

Power MOSFET

Low Gate Charge Qg Results in Simple Drive Requirement\nImproved Gate, Avalanche and Dynamic dV/dt Ruggedness\nFully Characterized Capacitance and Avalanche Voltage and Current;

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

HEXFET Power MOSFET

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

HEXFET Power MOSFET

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

HEXFET Power MOSFET

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

Power MOSFET

文件：168.31 Kbytes Page：9 Pages

Power MOSFET

文件：242.26 Kbytes Page：11 Pages

Power MOSFET

文件：168.31 Kbytes Page：9 Pages

Power MOSFET

文件：168.31 Kbytes Page：9 Pages

Power MOSFET

文件：242.26 Kbytes Page：11 Pages

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature