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IRF820A价格
参考价格:¥3.8027
型号:IRF820ALPBF 品牌:Vishay 备注:这里有IRF820A多少钱,2025年最近7天走势,今日出价,今日竞价,IRF820A批发/采购报价,IRF820A行情走势销售排行榜,IRF820A报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF820A | Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Cu | IRF | ||
IRF820A | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRF820A | N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 2.0Ω ( TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology | ISC 无锡固电 | ||
IRF820A | Power MOSFET 文件:168.31 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch | IRF | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFET Power MOSFET Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V | IRF | |||
HEXFET Power MOSFET Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V | IRF | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch | IRF | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www. | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFET Power MOSFET Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V | IRF | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:168.31 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:242.26 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:168.31 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:168.31 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:242.26 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
POWER INDUCTOR ●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc | AITSEMI 创瑞科技 | |||
WIRE WOUND SMD INDUCTOR ●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer | AITSEMI 创瑞科技 | |||
Screw/plug-in terminal strip Screw/screwless connection The terminal strip 820 with pitch 10 mm has a dual wire terminal connector on one side. Here, the leads are inserted and clamped all the way to the stop. These terminal strips are designed for solid conductors. The opposite side is equipped with screw connections with rectangular clamping spac | WECO | |||
SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment | PRODUCTWELL | |||
Panel Mount, Shocksafe 5x20mm Fuses 文件:85.15 Kbytes Page:1 Pages | Littelfuse 力特 |
IRF820A产品属性
- 类型
描述
- 型号
IRF820A
- 功能描述
MOSFET N-Chan 500V 2.5 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IR |
22+ |
D2-PAK |
9450 |
原装正品,实单请联系 |
|||
FAIRCHIL |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
VISHAY/威世 |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
FAIRCHILD |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
VISHAY(威世) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-263 |
501319 |
免费送样原盒原包现货一手渠道联系 |
|||
VISHAY |
19+ |
TO-220 |
15000 |
||||
FAIRCHILD |
05+ |
原厂原装 |
19717 |
只做全新原装真实现货供应 |
|||
IR/VISHAY |
25+ |
TOTO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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IRF820A规格书下载地址
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瀚佳科技: 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。
2018-12-28
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