您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第538页 > IRF820

IRF820价格

参考价格：￥9.1684

型号：IRF820 品牌：Vishay 备注：这里有IRF820多少钱，2024年最近7天走势，今日出价，今日竞价，IRF820批发/采购报价，IRF820行情走势销售排行榜，IRF820报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF820

N-CHANNELEnhancement-ModeSiliconGateTMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs2and2.5AMPERESrDS(on)=3OHM450and500VOLTS rDS(on)=4OHM450VOLTS

MotorolaMotorola, Inc

摩托罗拉

Motorola
IRF820

N-CHANNEL500V-2.5ohm-2.5A-TO-220PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=2.5Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALAN

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
IRF820

N-CHANNELPOWERMOSFETS

FEATURES ●LowerRDS(ON) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowerinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

Samsung
IRF820

N-ChannelPowerMOSFETs,3.0A,450V/500V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF820

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.5A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofParalleling •

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF820

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技

Vishay
IRF820

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRF820

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=2.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max) ·FastSwitchingSpeed ·SimpleDriveRequirements APPLICATIONS ·Highcurrent,highspeedswitching ·Swithmodepowersupplies(smps) ·

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF820

20A600VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

FCI

Amphenol ICC

FCI
IRF820

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRF820

PowerMOSFET

文件：156 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820

N-ChannelPowerMOSFETs

文件：381.94 Kbytes Page：5 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF820-220

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRF820-220FP

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRF820-251

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRF820-252

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRF820A

N-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •LowRDS(on)=2.0Ω(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF820A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandcurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF820A

PowerMOSFET(Vdss=500V,Rds(on)max=3.0ohm,Id=2.5A)

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCu

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820AL

PowerMOSFET(Vdss=500V,Rds(on)max=3.0ohm,Id=2.5A)

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalanch

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820AL

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF820AL

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalanche VoltageandCurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技

Vishay
IRF820ALPBF

HEXFETPowerMOSFET

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching •Lead-Free Benefits •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheV

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820ALPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF820APBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandcurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF820APBF

HEXFETPowerMOSFET

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching •Lead-Free Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheV

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820AS

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF820AS

PowerMOSFET(Vdss=500V,Rds(on)max=3.0ohm,Id=2.5A)

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalanch

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820AS

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalanche VoltageandCurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技

Vishay
IRF820AS_V01

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalanche VoltageandCurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技

Vishay
IRF820ASPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay
IRF820ASPBF

HEXFETPowerMOSFET

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching •Lead-Free Benefits •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheV

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF820L

DynamicdV/dtrating

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技

Vishay
IRF820L

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay
IRF820PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技

Vishay
IRF820S

DynamicdV/dtrating

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技

Vishay
IRF820S

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.5A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount •AvailableinTape&Reel •DynamicdV/dtRating •RepetitiveAvalanche

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820S

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay
IRF820S_V01

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay
IRF820_V01

PowerMOSFET

文件：156 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820A

PowerMOSFET

文件：168.31 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820A_V01

PowerMOSFET

文件：168.31 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820ALPBF

PowerMOSFET

文件：242.26 Kbytes Page：11 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820APBF

PowerMOSFET

文件：168.31 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820APBF-BE3

PowerMOSFET

文件：168.31 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820ASPBF

PowerMOSFET

文件：242.26 Kbytes Page：11 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820LPBF

PowerMOSFET

文件：238.32 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820PBF

PowerMOSFET

文件：156 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820PBF

HEXFET짰PowerMOSFET

文件：3.45273 Mbytes Page：7 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820PBF-BE3

PowerMOSFET

文件：156 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820SPBF

PowerMOSFET

文件：238.32 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820SPBF

HEXFET짰PowerMOSFET

文件：319.03 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF820STRLPBFA

PowerMOSFET

文件：238.32 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF820STRRPBFA

PowerMOSFET

文件：238.32 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

Vishay
820

POWERINDUCTOR

●FEATURE 1.Excellentsolderheatresistance(add“C”isforhighcurrenttype) 2.Lowvoltagedropsandsmallvariationsinductance ●APPLICATION 1.DCpowersupplycircuits 2.Powerlinechokecoils…etc

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
820

WIREWOUNDSMDINDUCTOR

●FEATURE 1.Lowcorelossforhighfrequencypowerapplication 2.Largeterminalsurface ●APPLICATION 1.Portablecommunicationequipment,notebookcomputer

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
820

Screw/plug-interminalstripScrew/screwlessconnection

Theterminalstrip820withpitch10mmhasadualwireterminalconnectoronone side.Here,theleadsareinsertedandclampedallthewaytothestop.These terminalstripsaredesignedforsolidconductors. Theoppositesideisequippedwithscrewconnectionswithrectangularclamping spac

WECOWECO Electrical Connectors Inc

威科电子深圳市威科电子连接器有限公司

WECO
820

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

PRODUCTWELLProductwell Precision Elect.CO.,LTD

寶德華股台灣寶德華股有限公司

PRODUCTWELL

IRF820产品属性

  • 类型

    描述

  • 型号

    IRF820

  • 功能描述

    MOSFET N-Chan 500V 2.5 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF820供应商更多...

更新时间：2024-4-24 10:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市安博威科技有限公司
IRF820PBF
VISHAY
21+
TO-220-3
46000
原装正品 有挂有货
询价
深圳市硅宇电子有限公司
IRF820PBF
Vishay(威世)
2249+
60573
二十余载金牌老企 研究所优秀合供单位 您的原厂窗口
询价
深圳市利加科技有限公司
IRF820
IR
16+
TO-220
10000
全新原装现货
询价
深圳市锦喆鸿电子有限公司
IRF820
IR
21+
TO-220
12588
原装正品,自己库存 假一罚十
询价
深圳市华斯顿科技有限公司
IRF820
SEC
22+23+
TO-220
38965
绝对原装正品全新进口深圳现货
询价
深圳市华来深电子有限公司
IRF820
IR
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
询价
深圳市佳鑫美电子科技有限公司
IRF820
ST
22+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
深圳市金华微盛电子有限公司
IRF820APBF
VISHAY
19+
TO-220
15000
询价
深圳市百视威讯电子科技有限公司
IRF820
23+
N/A
13150
正品授权货源可靠
询价
深圳市壹芯创科技有限公司
IRF820
ST
22+
TO-220
5000
全新原装现货!自家库存!
询价

IRF820芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

IRF820规格书下载地址

IRF820参数引脚图相关

IRF820数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示